Dr. Vladimir Kaganer

Epitaxial Heusler alloy Fe₃Si films on GaAs(001) substrates

@article{ author = { J. Herfort and B. Jenichen and V. M. Kaganer and A. Trampert and H.-P. Schönherr and K. H. Ploog }, title = { Epitaxial Heusler alloy Fe₃Si films on GaAs(001) substrates }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 32 }, year = { 2006 }, pages = { 371 } }

TY - JOUR AU - J. Herfort AU - B. Jenichen AU - V. M. Kaganer AU - A. Trampert AU - H.-P. Schönherr AU - K. H. Ploog TI - Epitaxial Heusler alloy Fe₃Si films on GaAs(001) substrates JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 32 SP - 371 PY - 2006/01/01

X-ray diffraction peaks at glancing incidence and glancing exit from highly mismatched epitaxial layers

@article{ author = { V. M. Kaganer and A. Shalimov and J. Bak-Misiuk and K. H. Ploog }, title = { X-ray diffraction peaks at glancing incidence and glancing exit from highly mismatched epitaxial layers }, journal = { Applied Physics Letters }, volume = { 89 }, year = { 2006 }, pages = { 021922 } }

TY - JOUR AU - V. M. Kaganer AU - A. Shalimov AU - J. Bak-Misiuk AU - K. H. Ploog TI - X-ray diffraction peaks at glancing incidence and glancing exit from highly mismatched epitaxial layers JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 89 SP - 021922 PY - 2006/01/01

Asymptotic x-ray scattering from highly mismatched epitaxial films

@article{ author = { V. M. Kaganer and A. Shalimov and J. Bak-Misiuk and K. H. Ploog }, title = { Asymptotic x-ray scattering from highly mismatched epitaxial films }, journal = { Journal of Physics: Condensed Matter }, volume = { 18 }, year = { 2006 }, pages = { 5047 } }

TY - JOUR AU - V. M. Kaganer AU - A. Shalimov AU - J. Bak-Misiuk AU - K. H. Ploog TI - Asymptotic x-ray scattering from highly mismatched epitaxial films JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 18 SP - 5047 PY - 2006/01/01

Coarsening of facetted two-dimensional islands by dynamic coalescence

@article{ author = { V. M. Kaganer and K. H. Ploog and K. K. Sabelfeld }, title = { Coarsening of facetted two-dimensional islands by dynamic coalescence }, journal = { Physical Review B: Solid State }, volume = { 73 }, year = { 2006 }, pages = { 115425 } }

TY - JOUR AU - V. M. Kaganer AU - K. H. Ploog AU - K. K. Sabelfeld TI - Coarsening of facetted two-dimensional islands by dynamic coalescence JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 73 SP - 115425 PY - 2006/01/01

Synchrotron x-ray scattering study of thin epitaxial Pr₂O₃ films on Si(001)

@article{ author = { X. Guo and W. Braun and B. Jenichen and V. M. Kaganer and B. P. Tinkham and A. Trampert and K. H. Ploog }, title = { Synchrotron x-ray scattering study of thin epitaxial Pr₂O₃ films on Si(001) }, journal = { Journal of Applied Physics }, volume = { 100 }, year = { 2006 }, pages = { 023536 } }

TY - JOUR AU - X. Guo AU - W. Braun AU - B. Jenichen AU - V. M. Kaganer AU - B. P. Tinkham AU - A. Trampert AU - K. H. Ploog TI - Synchrotron x-ray scattering study of thin epitaxial Pr₂O₃ films on Si(001) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 100 SP - 023536 PY - 2006/01/01

X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

@article{ author = { V. M. Kaganer and O. Brandt and A. Trampert and K. H. Ploog }, title = { X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films }, journal = { Physical Review B: Solid State }, volume = { 72 }, year = { 2005 }, pages = { 045423 } }

TY - JOUR AU - V. M. Kaganer AU - O. Brandt AU - A. Trampert AU - K. H. Ploog TI - X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 72 SP - 045423 PY - 2005/01/01

Surface dynamics of III-V semiconductors studied by in situ x-ray diffraction during molecular beam epitaxy

@article{ author = { W. Braun and V. M. Kaganer and B. Jenichen and B. Tinkham and K. H. Ploog }, title = { Surface dynamics of III-V semiconductors studied by in situ x-ray diffraction during molecular beam epitaxy }, journal = { Zeitschrift für Kristallographie }, volume = { 220 }, year = { 2005 }, pages = { 225 } }

TY - JOUR AU - W. Braun AU - V. M. Kaganer AU - B. Jenichen AU - B. Tinkham AU - K. H. Ploog TI - Surface dynamics of III-V semiconductors studied by in situ x-ray diffraction during molecular beam epitaxy JF - Zeitschrift für Kristallographie JA - Z. Kristallogr. J1 - ZKr VL - 220 SP - 225 PY - 2005/01/01

Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ x-ray diffraction

@article{ author = { V. M. Kaganer and W. Braun and B. Jenichen and K. H. Ploog }, title = { Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ x-ray diffraction }, journal = { Physica B: Condensed Matter }, volume = { 357 }, year = { 2005 }, pages = { 165 } }

TY - JOUR AU - V. M. Kaganer AU - W. Braun AU - B. Jenichen AU - K. H. Ploog TI - Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ x-ray diffraction JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 357 SP - 165 PY - 2005/01/01

In-situ grazing incidence x-ray diffraction study of strain evolution during growth and postgrowth annealing of MnAs on GaAs(113)A

@article{ author = { D. K. Satapathy and B. Jenichen and W. Braun and V. M. Kaganer and L. Däweritz and K. H. Ploog }, title = { <em>In-situ</em> grazing incidence x-ray diffraction study of strain evolution during growth and postgrowth annealing of MnAs on GaAs(113)A }, journal = { Journal of Physics D: Applied Physics }, volume = { 38 }, year = { 2005 }, pages = { A164 } }

TY - JOUR AU - D. K. Satapathy AU - B. Jenichen AU - W. Braun AU - V. M. Kaganer AU - L. Däweritz AU - K. H. Ploog TI - <em>In-situ</em> grazing incidence x-ray diffraction study of strain evolution during growth and postgrowth annealing of MnAs on GaAs(113)A JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 38 SP - A164 PY - 2005/01/01

Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface x-ray diffraction

@article{ author = { W. Braun and V. M. Kaganer and B. Jenichen and D. K. Satapathy and X. X. Guo and B. P. Tinkham and K. H. Ploog }, title = { Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface x-ray diffraction }, journal = { Journal of Crystal Growth }, volume = { 278 }, year = { 2005 }, pages = { 449 } }

TY - JOUR AU - W. Braun AU - V. M. Kaganer AU - B. Jenichen AU - D. K. Satapathy AU - X. X. Guo AU - B. P. Tinkham AU - K. H. Ploog TI - Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface x-ray diffraction JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 278 SP - 449 PY - 2005/01/01