Dr. Michael Hanke

Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and Z. Galazka and A. Trampert }, title = { Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 182102 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - Z. Galazka AU - A. Trampert TI - Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 182102 PY - 2018/10/31

Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin fi lms promoting selective surface acoustic wave propagation

@article{ author = { L. von Helden and M. Schmidbauer and S. Liang and M. Hanke and R. Wördenweber and J. Schwarzkopf }, title = { Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin fi lms promoting selective surface acoustic wave propagation }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 415704 } }

TY - JOUR AU - L. von Helden AU - M. Schmidbauer AU - S. Liang AU - M. Hanke AU - R. Wördenweber AU - J. Schwarzkopf TI - Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin fi lms promoting selective surface acoustic wave propagation JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 29 SP - 415704 PY - 2018/08/09

Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy

@article{ author = { Z. Cheng and M. Hanke and Z. Galazka and A. Trampert }, title = { Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 395705 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - Z. Galazka AU - A. Trampert TI - Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 29 SP - 395705 PY - 2018/07/23

Ordered structure of FeGe2 formed during solid-phase epitaxy

@article{ author = { B. Jenichen and M. Hanke and S. Gaucher and A. Trampert and J. Herfort and H. Kirmse and B. Haas and E. Willinger and X. Huang and S. C. Erwin }, title = { Ordered structure of FeGe2 formed during solid-phase epitaxy }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 051402 } }

TY - JOUR AU - B. Jenichen AU - M. Hanke AU - S. Gaucher AU - A. Trampert AU - J. Herfort AU - H. Kirmse AU - B. Haas AU - E. Willinger AU - X. Huang AU - S. C. Erwin TI - Ordered structure of FeGe2 formed during solid-phase epitaxy JF - Physical Review Materials JA - PRMaterials J1 - 2475-9953 VL - 2 SP - 051402 PY - 2018/05/21

2D or not 2D: Strain tuning in weakly coupled heterostructures

@article{ author = { R. Wang and F. R. L. Lange and S. Cecchi and M. Hanke and M. Wuttig and R. Calarco }, title = { 2D or not 2D: Strain tuning in weakly coupled heterostructures }, journal = { Advanced Functional Materials }, volume = { }, year = { 2018 }, pages = { 1 } }

TY - JOUR AU - R. Wang AU - F. R. L. Lange AU - S. Cecchi AU - M. Hanke AU - M. Wuttig AU - R. Calarco TI - 2D or not 2D: Strain tuning in weakly coupled heterostructures JF - Advanced Functional Materials JA - Adv. Funct. Mater. J1 - VL - SP - 1 PY - 2018/01/31

Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires

@article{ author = { A. Al Hassan and R. B. Lewis and H. Küpers and W. H. Lin and D. Bahrami and T. Krause and D. Salomon and A. Tahraoui and M. Hanke and L. Geelhaar and U. Pietsch }, title = { Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 014604 } }

TY - JOUR AU - A. Al Hassan AU - R. B. Lewis AU - H. Küpers AU - W. H. Lin AU - D. Bahrami AU - T. Krause AU - D. Salomon AU - A. Tahraoui AU - M. Hanke AU - L. Geelhaar AU - U. Pietsch TI - Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires JF - Physical Review Materials JA - PRMaterials J1 - 2475-9953 VL - 2 SP - 014604 PY - 2018/01/19

Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films

@article{ author = { D. Braun and M. Schmidbauer and M. Hanke and J. Schwarzkopf }, title = { Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 015701 } }

TY - JOUR AU - D. Braun AU - M. Schmidbauer AU - M. Hanke AU - J. Schwarzkopf TI - Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 29 SP - 015701 PY - 2018/01/01

Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and P. Vogt and O. Bierwagen and A. Trampert }, title = { Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 162104 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - P. Vogt AU - O. Bierwagen AU - A. Trampert TI - Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 162104 PY - 2017/10/16

Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers

@article{ author = { J. Schwarzkopf and D. Braun and M. Hanke and R. Uecker and M. Schmidbauer }, title = { Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers }, journal = { Frontiers in Materials }, volume = { 4:26 }, year = { 2017 }, pages = { 1 } }

TY - JOUR AU - J. Schwarzkopf AU - D. Braun AU - M. Hanke AU - R. Uecker AU - M. Schmidbauer TI - Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers JF - Frontiers in Materials JA - Front. Mater. J1 - VL - 4:26 SP - 1 PY - 2017/08/16

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires

@article{ author = { J. Bartolomé and M. Hanke and D. v. Treeck and A. Trampert }, title = { Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4654 } }

TY - JOUR AU - J. Bartolomé AU - M. Hanke AU - D. v. Treeck AU - A. Trampert TI - Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4654 PY - 2017/07/22