Dr. Esperanza Luna García de la Infanta

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: photoreflectance studies of bandgap alignment

@article{ author = { R. Kudrawiec and J. Kopaczek and O. Delorme and M. P. Polak and M. Gladysiewicz and E. Luna and L. Cerutti and E. Tournie and J. B. Rodriguez }, title = { Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: photoreflectance studies of bandgap alignment }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 2055706 } }

TY - JOUR AU - R. Kudrawiec AU - J. Kopaczek AU - O. Delorme AU - M. P. Polak AU - M. Gladysiewicz AU - E. Luna AU - L. Cerutti AU - E. Tournie AU - J. B. Rodriguez TI - Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: photoreflectance studies of bandgap alignment JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 2055706 PY - 2019/05/30

Determination of the interface grading parameter for terahertz quantum-cascade laser structures based on transmission electron microscopy

@article{ author = { X. Lü and E. Luna and L. Schrottke and K. Biermann and H. T. Grahn }, title = { Determination of the interface grading parameter for terahertz quantum-cascade laser structures based on transmission electron microscopy }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 172101 } }

TY - JOUR AU - X. Lü AU - E. Luna AU - L. Schrottke AU - K. Biermann AU - H. T. Grahn TI - Determination of the interface grading parameter for terahertz quantum-cascade laser structures based on transmission electron microscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 172101 PY - 2018/10/22

Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness

@article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.B. Rodriguez and A. Trampert }, title = { Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness }, journal = { Semiconductor Science and Technology }, volume = { 33 }, year = { 2018 }, pages = { 094006 } }

TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.B. Rodriguez AU - A. Trampert TI - Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 33 SP - 094006 PY - 2018/08/17

Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications

@article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.-B. Rodriguez and A. Trampert }, title = { Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151905 } }

TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.-B. Rodriguez AU - A. Trampert TI - Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151905 PY - 2018/04/10

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

@article{ author = { W.-H. Lin and U. Jahn and H. Küpers and E. Luna and R. B. Lewis and L. Geelhaar and O. Brandt }, title = { Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 415703 } }

TY - JOUR AU - W.-H. Lin AU - U. Jahn AU - H. Küpers AU - E. Luna AU - R. B. Lewis AU - L. Geelhaar AU - O. Brandt TI - Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 415703 PY - 2017/09/13

The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells

@article{ author = { E. Luna and J. Puustinen and M.Wu and J. Hilska and M.Guina and A. Trampert }, title = { The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells }, journal = { Nanoscience and Nanotechnology Letters }, volume = { 9 }, year = { 2017 }, pages = { 1132 } }

TY - JOUR AU - E. Luna AU - J. Puustinen AU - M.Wu AU - J. Hilska AU - M.Guina AU - A. Trampert TI - The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells JF - Nanoscience and Nanotechnology Letters JA - Nanosci. Nanotechnol. Lett. J1 - ISSN: 1941-4900 (Print); EISSN: 1941-4919 (Online) VL - 9 SP - 1132 PY - 2017/07/01

GaSbBi/GaSb quantum well laser diodes

@article{ author = { O. Delorme and L. Cerutti and E. Luna and G.Narcy and A. Trampert and E. Tournie and J.-B.Rodriguez }, title = { GaSbBi/GaSb quantum well laser diodes }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 222106 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - E. Luna AU - G.Narcy AU - A. Trampert AU - E. Tournie AU - J.-B.Rodriguez TI - GaSbBi/GaSb quantum well laser diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 222106 PY - 2017/06/02

Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells

@article{ author = { E. Luna and R. Gargallo-Caballero and F. Ishikawa and A. Trampert }, title = { Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 201906 } }

TY - JOUR AU - E. Luna AU - R. Gargallo-Caballero AU - F. Ishikawa AU - A. Trampert TI - Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 201906 PY - 2017/05/19

Supernormal hardness increase of dilute Ga(As, N) thin films

@article{ author = { J. Berggren and M. Hanke and E. Luna and A. Trampert }, title = { Supernormal hardness increase of dilute Ga(As, N) thin films }, journal = { Journal of Applied Physics }, volume = { 121 }, year = { 2017 }, pages = { 095105 } }

TY - JOUR AU - J. Berggren AU - M. Hanke AU - E. Luna AU - A. Trampert TI - Supernormal hardness increase of dilute Ga(As, N) thin films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 121 SP - 095105 PY - 2017/03/07

GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

@article{ author = { P.K. Patil and E. Luna and T. Matsuda and K.Yamada and K.Kamiya and F.Ishikawa and S.Shimomura }, title = { GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 105702 } }

TY - JOUR AU - P.K. Patil AU - E. Luna AU - T. Matsuda AU - K.Yamada AU - K.Kamiya AU - F.Ishikawa AU - S.Shimomura TI - GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 105702 PY - 2017/02/01