Senior Scientist
phone: +49 30 20377 281
room: 0621
email: luna@pdi-berlin.de
Department: Microstructure
Core research areas: Intersubband emitters , Nanoanalytics , III-V nanowires for optoelectronics
11 | Author | R. Kudrawiec , J. Kopaczek , O. Delorme , M. P. Polak , M. Gladysiewicz , E. Luna , L. Cerutti , E. Tournie , J. B. Rodriguez |
Title |
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: photoreflectance studies of bandgap alignment |
|
Source | J. Appl. Phys. , 125 , 2055706 ( 2019 ) | |
DOI : 10.1063/1.5094159 | Download: PDF | Cite : Bibtex RIS |
12 | Author | X. Lü , E. Luna , L. Schrottke , K. Biermann , H. T. Grahn |
Title |
Determination of the interface grading parameter for terahertz quantum-cascade laser structures based on transmission electron microscopy |
|
Source | Appl. Phys. Lett. , 113 , 172101 ( 2018 ) | |
DOI : 10.1063/1.5042326 | Download: PDF | Cite : Bibtex RIS |
13 | Author | E. Luna , O. Delorme , L. Cerutti , E. Tournie , J.B. Rodriguez , A. Trampert |
Title |
Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness |
|
Source | Semicond. Sci. Technol. , 33 , 094006 ( 2018 ) | |
DOI : 10.1088/1361-6641/aad5c4 | Cite : Bibtex RIS |
14 | Author | E. Luna , O. Delorme , L. Cerutti , E. Tournie , J.-B. Rodriguez , A. Trampert |
Title |
Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications |
|
Source | Appl. Phys. Lett. , 112 , 151905 ( 2018 ) | |
DOI : 10.1063/1.5024199 | Download: PDF | Cite : Bibtex RIS |
15 | Author | W.-H. Lin , U. Jahn , H. Küpers , E. Luna , R. B. Lewis , L. Geelhaar , O. Brandt |
Title |
Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy |
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Source | Nanotechnology , 28 , 415703 ( 2017 ) | |
DOI : 10.1088/1361-6528/aa8394 | Cite : Bibtex RIS |
16 | Author | E. Luna , J. Puustinen , M.Wu , J. Hilska , M.Guina , A. Trampert |
Title |
The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells |
|
Source | Nanosci. Nanotechnol. Lett. , 9 , 1132 ( 2017 ) | |
DOI : 10.1166/nnl.2017.2448 | Cite : Bibtex RIS |
17 | Author | O. Delorme , L. Cerutti , E. Luna , G.Narcy , A. Trampert , E. Tournie , J.-B.Rodriguez |
Title |
GaSbBi/GaSb quantum well laser diodes |
|
Source | Appl. Phys. Lett. , 110 , 222106 ( 2017 ) | |
DOI : 10.1063/1.4984799 | Download: PDF | Cite : Bibtex RIS |
18 | Author | E. Luna , R. Gargallo-Caballero , F. Ishikawa , A. Trampert |
Title |
Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells |
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Source | Appl. Phys. Lett. , 110 , 201906 ( 2017 ) | |
DOI : 10.1063/1.4983837 | Download: PDF | Cite : Bibtex RIS |
19 | Author | J. Berggren , M. Hanke , E. Luna , A. Trampert |
Title |
Supernormal hardness increase of dilute Ga(As, N) thin films |
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Source | J. Appl. Phys. , 121 , 095105 ( 2017 ) | |
DOI : 10.1063/1.4978019 | Download: PDF | Cite : Bibtex RIS |
20 | Author | P.K. Patil , E. Luna , T. Matsuda , K.Yamada , K.Kamiya , F.Ishikawa , S.Shimomura |
Title |
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique |
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Source | Nanotechnology , 28 , 105702 ( 2017 ) | |
DOI : 10.1088/1361-6528/aa596c | Cite : Bibtex RIS |