Dr. Esperanza Luna García de la Infanta

Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length

@article{ author = { H. Küpers and F. Bastiman and E. Luna and C. Somaschini and L. Geelhaar }, title = { Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length }, journal = { Journal of Crystal Growth }, volume = { 459 }, year = { 2016 }, pages = { 43 } }

TY - JOUR AU - H. Küpers AU - F. Bastiman AU - E. Luna AU - C. Somaschini AU - L. Geelhaar TI - Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 459 SP - 43 PY - 2016/11/18

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wells

@article{ author = { E. Luna and M. Wu and M. Hanke and J. Puustinen and M. Guina and A. Trampert }, title = { Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wells }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 325603 } }

TY - JOUR AU - E. Luna AU - M. Wu AU - M. Hanke AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wells JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 325603 PY - 2016/07/01

Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy

@article{ author = { J. Lu and E. Luna and T. Aoki and E.H. Steenbergen and Y.-H. Zhang and D.J.Smith }, title = { Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 119 }, year = { 2016 }, pages = { 095702 } }

TY - JOUR AU - J. Lu AU - E. Luna AU - T. Aoki AU - E.H. Steenbergen AU - Y.-H. Zhang AU - D.J.Smith TI - Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 119 SP - 095702 PY - 2016/03/01

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

@article{ author = { J. K. Zettler and P. Corfdir and C. Hauswald and E. Luna and U. Jahn and T. Flissikowski and E. Schmidt and C. Ronning and A. Trampert and L. Geelhaar and H. T. Grahn and O. Brandt and S. Fernández-Garrido }, title = { Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 973 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - C. Hauswald AU - E. Luna AU - U. Jahn AU - T. Flissikowski AU - E. Schmidt AU - C. Ronning AU - A. Trampert AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - S. Fernández-Garrido TI - Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 973 PY - 2016/02/10

Detecting lateral composition modulation in dilute GaAsBi epilayers

@article{ author = { M. Wu and M. Hanke and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Detecting lateral composition modulation in dilute GaAsBi epilayers }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 425701 } }

TY - JOUR AU - M. Wu AU - M. Hanke AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Detecting lateral composition modulation in dilute GaAsBi epilayers JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 425701 PY - 2015/09/30

Te-doping of self-catalyzed GaAs nanowires

@article{ author = { S. Suomalainen and T.V. Hakkarainen and T. Salminen and R. Koskinen and M. Honkanen and E. Luna and M. Guina }, title = { Te-doping of self-catalyzed GaAs nanowires }, journal = { Applied Physics Letters }, volume = { 107 }, year = { 2015 }, pages = { 012101 } }

TY - JOUR AU - S. Suomalainen AU - T.V. Hakkarainen AU - T. Salminen AU - R. Koskinen AU - M. Honkanen AU - E. Luna AU - M. Guina TI - Te-doping of self-catalyzed GaAs nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 107 SP - 012101 PY - 2015/07/06

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers

@article{ author = { E. Luna and M.Wu and J. Puustinen and M. Guina and A. Trampert }, title = { Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 185302 } }

TY - JOUR AU - E. Luna AU - M.Wu AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 185302 PY - 2015/05/08

Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study

@article{ author = { E. Luna and J. Grandal and E. Gallardo and J.M. Calleja and M.A. Sanchez-Garcia and E. Calleja and A. Trampert }, title = { Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study }, journal = { Microscopy and Microanalysis }, volume = { 20 }, year = { 2014 }, pages = { 1471 } }

TY - JOUR AU - E. Luna AU - J. Grandal AU - E. Gallardo AU - J.M. Calleja AU - M.A. Sanchez-Garcia AU - E. Calleja AU - A. Trampert TI - Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study JF - Microscopy and Microanalysis JA - Microsc Microanal J1 - VL - 20 SP - 1471 PY - 2014/09/29

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

@article{ author = { M. Wu and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Observation of atomic ordering of triple-period-A and -B type in GaAsBi }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 041602 } }

TY - JOUR AU - M. Wu AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Observation of atomic ordering of triple-period-A and -B type in GaAsBi JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 041602 PY - 2014/07/30

Efficient simulation of the impact of interface grading on the optical and transport properties of semiconductor heterostructures

@article{ author = { X. Lü and L. Schrottke and E. Luna and H. T. Grahn }, title = { Efficient simulation of the impact of interface grading on the optical and transport properties of semiconductor heterostructures }, journal = { Applied Physics Letters }, volume = { 104 }, year = { 2014 }, pages = { 232106 } }

TY - JOUR AU - X. Lü AU - L. Schrottke AU - E. Luna AU - H. T. Grahn TI - Efficient simulation of the impact of interface grading on the optical and transport properties of semiconductor heterostructures JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 104 SP - 232106 PY - 2014/06/10