Dr. Esperanza Luna García de la Infanta

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

@article{ author = { M. Wu and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 205605 } }

TY - JOUR AU - M. Wu AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 205605 PY - 2014/04/30

Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires

@article{ author = { O. Brandt and S. Fernández-Garrido and J. K. Zettler and E. Luna and U. Jahn and C. Chèze and V. M. Kaganer }, title = { Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires }, journal = { Crystal Growth & Design }, volume = { 14 }, year = { 2014 }, pages = { 2246 } }

TY - JOUR AU - O. Brandt AU - S. Fernández-Garrido AU - J. K. Zettler AU - E. Luna AU - U. Jahn AU - C. Chèze AU - V. M. Kaganer TI - Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 14 SP - 2246 PY - 2014/04/23

Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study

@article{ author = { P. Kusch and E. Grelich and C. Somaschini and E. Luna and M. Ramsteiner and L. Geelhaar and H. Riechert and S. Reich }, title = { Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study }, journal = { Physical Review B: Solid State }, volume = { 89 }, year = { 2014 }, pages = { 045310 } }

TY - JOUR AU - P. Kusch AU - E. Grelich AU - C. Somaschini AU - E. Luna AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert AU - S. Reich TI - Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 89 SP - 045310 PY - 2014/01/27

Variation of lattice constant and cluster formation in GaAsBi

@article{ author = { J. Puustinen and M. Wu and E. Luna and A. Schramm and P. Laukkanen and M. Laitinen and T. Sajavaara and M. Guina }, title = { Variation of lattice constant and cluster formation in GaAsBi }, journal = { Journal of Applied Physics }, volume = { 114 }, year = { 2013 }, pages = { 243504 } }

TY - JOUR AU - J. Puustinen AU - M. Wu AU - E. Luna AU - A. Schramm AU - P. Laukkanen AU - M. Laitinen AU - T. Sajavaara AU - M. Guina TI - Variation of lattice constant and cluster formation in GaAsBi JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 114 SP - 243504 PY - 2013/12/23

Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots

@article{ author = { T.V.Hakkarainen and E. Luna and J. Tommila and A. Schramm and M. Guina }, title = { Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots }, journal = { Journal of Applied Physics }, volume = { 114 }, year = { 2013 }, pages = { 174304 } }

TY - JOUR AU - T.V.Hakkarainen AU - E. Luna AU - J. Tommila AU - A. Schramm AU - M. Guina TI - Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 114 SP - 174304 PY - 2013/11/05

Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains

@article{ author = { T. V. Hakkarainen and A. Schramm and E. Luna and J. Tommila and M. Guina }, title = { Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains }, journal = { Journal of Crystal Growth }, volume = { 378 }, year = { 2013 }, pages = { 470 } }

TY - JOUR AU - T. V. Hakkarainen AU - A. Schramm AU - E. Luna AU - J. Tommila AU - M. Guina TI - Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 378 SP - 470 PY - 2013/01/01

Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy

@article{ author = { E. Luna and R. Hey and A. Trampert }, title = { Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy }, journal = { Journal of Vacuum Science and Technology B }, volume = { 30 }, year = { 2012 }, pages = { 02B108 } }

TY - JOUR AU - E. Luna AU - R. Hey AU - A. Trampert TI - Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 30 SP - 02B108 PY - 2012/01/01

Strain-induced composition limitation in nitrogen -doped (In,Ga)As/GaAs quantum wells

@article{ author = { R. Gargallo-Caballero and E. Luna and F. Ishikawa and A. Trampert }, title = { Strain-induced composition limitation in nitrogen -doped (In,Ga)As/GaAs quantum wells }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 171906 } }

TY - JOUR AU - R. Gargallo-Caballero AU - E. Luna AU - F. Ishikawa AU - A. Trampert TI - Strain-induced composition limitation in nitrogen -doped (In,Ga)As/GaAs quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 171906 PY - 2012/01/01

Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

@article{ author = { E. Luna and A. M. Beltran and A. M. Sanchez and S. I. Molina }, title = { Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 011601 } }

TY - JOUR AU - E. Luna AU - A. M. Beltran AU - A. M. Sanchez AU - S. I. Molina TI - Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 011601 PY - 2012/01/01

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

@article{ author = { R. Gargallo-Caballero and A. Guzman and J. M. Ulloa and A. Hierro and M. Hopkinson and E. Luna and A. Trampert }, title = { Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 083530 } }

TY - JOUR AU - R. Gargallo-Caballero AU - A. Guzman AU - J. M. Ulloa AU - A. Hierro AU - M. Hopkinson AU - E. Luna AU - A. Trampert TI - Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 083530 PY - 2012/01/01