Dr. Esperanza Luna García de la Infanta

Highly tensile-strained, type-II, Ga_1-xIn_xAs/GaSb quantum wells

@article{ author = { T. Taliercio and A. Gassenq and E. Luna and A. Trampert and E. Tournie }, title = { Highly tensile-strained, type-II, Ga_1-xIn_xAs/GaSb quantum wells }, journal = { Applied Physics Letters }, volume = { 96 }, year = { 2010 }, pages = { 062109 } }

TY - JOUR AU - T. Taliercio AU - A. Gassenq AU - E. Luna AU - A. Trampert AU - E. Tournie TI - Highly tensile-strained, type-II, Ga_1-xIn_xAs/GaSb quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 96 SP - 062109 PY - 2010/01/01

InN nanocolumns

@article{ author = { J. Grandal and M. A. Sánchez-García and E. Calleja and S. Lazic and E. Gallardo and J. M. Calleja and E. Luna and A. Trampert and M. Niebelschütz and V. Cimalla and O. Ambacher }, title = { InN nanocolumns }, journal = { Indium Nitride and Related Alloys; edited by T. D. Veal, C. F. McConville, W. J. Schaff (CRC Press, Boca Raton, 2010) }, volume = { }, year = { 2010 }, pages = { 599 } }

TY - JOUR AU - J. Grandal AU - M. A. Sánchez-García AU - E. Calleja AU - S. Lazic AU - E. Gallardo AU - J. M. Calleja AU - E. Luna AU - A. Trampert AU - M. Niebelschütz AU - V. Cimalla AU - O. Ambacher TI - InN nanocolumns JF - Indium Nitride and Related Alloys; edited by T. D. Veal, C. F. McConville, W. J. Schaff (CRC Press, Boca Raton, 2010) JA - Indium Nitride and Related Alloys J1 - VL - SP - 599 PY - 2010/01/01

Anti-Stokes and Stokes photoluminescence in non-uniform GaAs-based quantum wells

@article{ author = { K. Fujiwara and A. Satake and N. Takata and U. Jahn and E. Luna and H.T. Grahn }, title = { Anti-Stokes and Stokes photoluminescence in non-uniform GaAs-based quantum wells }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 42 }, year = { 2010 }, pages = { 2658 } }

TY - JOUR AU - K. Fujiwara AU - A. Satake AU - N. Takata AU - U. Jahn AU - E. Luna AU - H.T. Grahn TI - Anti-Stokes and Stokes photoluminescence in non-uniform GaAs-based quantum wells JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 42 SP - 2658 PY - 2010/01/01

Nonuniform exciton localization in different GaAs quantum wells studied by spatially resolved cross-sectional cathodoluminescence

@article{ author = { K. Fujiwara and U. Jahn and E. Luna and H.T. Grahn }, title = { Nonuniform exciton localization in different GaAs quantum wells studied by spatially resolved cross-sectional cathodoluminescence }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { 201 } }

TY - JOUR AU - K. Fujiwara AU - U. Jahn AU - E. Luna AU - H.T. Grahn TI - Nonuniform exciton localization in different GaAs quantum wells studied by spatially resolved cross-sectional cathodoluminescence JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - 201 PY - 2009/01/01

InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates

@article{ author = { J. Grandal and M. A. Sánchez-García and E. Calleja and E. Gallardo and J. M. Calleja and E. Luna and A. Trampert and U. Jahn }, title = { InN nanocolumns grown by plasma-assisted molecular beam epitaxy on <em>A</em>-plane GaN templates }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 221908 } }

TY - JOUR AU - J. Grandal AU - M. A. Sánchez-García AU - E. Calleja AU - E. Gallardo AU - J. M. Calleja AU - E. Luna AU - A. Trampert AU - U. Jahn TI - InN nanocolumns grown by plasma-assisted molecular beam epitaxy on <em>A</em>-plane GaN templates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 221908 PY - 2009/01/01

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

@article{ author = { E. Luna and F. Ishikawa and B. Satpati and J. B. Rodriguez and E. Tournie and A. Trampert }, title = { Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 311 }, year = { 2009 }, pages = { 1739 } }

TY - JOUR AU - E. Luna AU - F. Ishikawa AU - B. Satpati AU - J. B. Rodriguez AU - E. Tournie AU - A. Trampert TI - Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 311 SP - 1739 PY - 2009/01/01

The role of Sb and N ions on the morphology and localization of (Ga,In)(N,As) quantum wells

@article{ author = { A. Guzman and E. Luna and F. Ishikawa and A. Trampert }, title = { The role of Sb and N ions on the morphology and localization of (Ga,In)(N,As) quantum wells }, journal = { Journal of Crystal Growth }, volume = { 311 }, year = { 2009 }, pages = { 1728 } }

TY - JOUR AU - A. Guzman AU - E. Luna AU - F. Ishikawa AU - A. Trampert TI - The role of Sb and N ions on the morphology and localization of (Ga,In)(N,As) quantum wells JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 311 SP - 1728 PY - 2009/01/01

Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy

@article{ author = { Z. Gavcevic and S. Fernández-Garrido and E. Calleja and E. Luna and A. Trampert }, title = { Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { S643 } }

TY - JOUR AU - Z. Gavcevic AU - S. Fernández-Garrido AU - E. Calleja AU - E. Luna AU - A. Trampert TI - Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - S643 PY - 2009/01/01

Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (111)B GaAs

@article{ author = { E. Luna and A. Trampert and J. Miguel-Sanchez and A. Guzman and K. H. Ploog }, title = { Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (111)B GaAs }, journal = { Journal of Physics and Chemistry of Solids }, volume = { 69 }, year = { 2008 }, pages = { 343 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - J. Miguel-Sanchez AU - A. Guzman AU - K. H. Ploog TI - Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (111)B GaAs JF - Journal of Physics and Chemistry of Solids JA - J. Phys. Chem. Solids J1 - VL - 69 SP - 343 PY - 2008/01/01

Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells

@article{ author = { E. Luna and A. Trampert and E.-M. Pavelescu and M. Pessa }, title = { Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells }, journal = { Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials 2007; edited by A. G. Cullis and P. A. Midgley (Springer, Dordrecht, 2007) }, volume = { }, year = { 2008 }, pages = { 99 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - E.-M. Pavelescu AU - M. Pessa TI - Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells JF - Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials 2007; edited by A. G. Cullis and P. A. Midgley (Springer, Dordrecht, 2007) JA - Proc. ICMSM 15 J1 - VL - SP - 99 PY - 2008/01/01