Dr. Esperanza Luna García de la Infanta

Structural and optical properties of vertically stacked triple InAs dot-in-well structure

@article{ author = { G. Rainò and A. Salhi and V. Tasco and M. De Vittorio and A. Passaseo and R. Cingolani and M. De Giorgi and E. Luna and A. Trampert }, title = { Structural and optical properties of vertically stacked triple InAs dot-in-well structure }, journal = { Journal of Applied Physics }, volume = { 103 }, year = { 2008 }, pages = { 096107 } }

TY - JOUR AU - G. Rainò AU - A. Salhi AU - V. Tasco AU - M. De Vittorio AU - A. Passaseo AU - R. Cingolani AU - M. De Giorgi AU - E. Luna AU - A. Trampert TI - Structural and optical properties of vertically stacked triple InAs dot-in-well structure JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 103 SP - 096107 PY - 2008/01/01

Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

@article{ author = { E. Luna and F. Ishikawa and P. D. Batista and A. Trampert }, title = { Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells }, journal = { Applied Physics Letters }, volume = { 92 }, year = { 2008 }, pages = { 141913 } }

TY - JOUR AU - E. Luna AU - F. Ishikawa AU - P. D. Batista AU - A. Trampert TI - Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 92 SP - 141913 PY - 2008/01/01

Linear increase of the modal gain in 1.3 μm InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers

@article{ author = { A. Salhi and G. Rainò and L. Fortunato and V. Tasco and L. Martiradonna and M. T. Todaro and M. De Giorgi and R. Cingolani and A. Passaseo and E. Luna and A. Trampert and M. De Vittorio }, title = { Linear increase of the modal gain in 1.3 <span class="math"><em>μ</em></span>m InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers }, journal = { Nanotechnology }, volume = { 19 }, year = { 2008 }, pages = { 275401 } }

TY - JOUR AU - A. Salhi AU - G. Rainò AU - L. Fortunato AU - V. Tasco AU - L. Martiradonna AU - M. T. Todaro AU - M. De Giorgi AU - R. Cingolani AU - A. Passaseo AU - E. Luna AU - A. Trampert AU - M. De Vittorio TI - Linear increase of the modal gain in 1.3 <span class="math"><em>μ</em></span>m InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 19 SP - 275401 PY - 2008/01/01

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

@article{ author = { S. Fernández-Garrido and A. Redondo-Cubero and R. Gago and F. Bertram and J. Christen and E. Luna and A. Trampert and J. Pereiro and E. Munoz and E. Calleja }, title = { Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 104 }, year = { 2008 }, pages = { 083510 } }

TY - JOUR AU - S. Fernández-Garrido AU - A. Redondo-Cubero AU - R. Gago AU - F. Bertram AU - J. Christen AU - E. Luna AU - A. Trampert AU - J. Pereiro AU - E. Munoz AU - E. Calleja TI - Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 104 SP - 083510 PY - 2008/01/01

Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

@article{ author = { J. Grandal and M. A. Sánchez-García and E. Calleja and E. Luna and A. Trampert }, title = { Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 91 }, year = { 2007 }, pages = { 021902 } }

TY - JOUR AU - J. Grandal AU - M. A. Sánchez-García AU - E. Calleja AU - E. Luna AU - A. Trampert TI - Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 91 SP - 021902 PY - 2007/01/01

Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy

@article{ author = { E. Luna and A. Trampert and E-M. Pavelescu and M. Pessa }, title = { Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy }, journal = { New Journal Physics }, volume = { 9 }, year = { 2007 }, pages = { 405 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - E-M. Pavelescu AU - M. Pessa TI - Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy JF - New Journal Physics JA - New J. Phys. J1 - VL - 9 SP - 405 PY - 2007/01/01

Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns

@article{ author = { S. Lazic and E. Gallardo and J. M. Calleja and F. Agullo-Rueda and J. Grandal and M. A. Sánchez-García and E. Calleja and E. Luna and A. Trampert }, title = { Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns }, journal = { Physical Review B: Solid State }, volume = { 76 }, year = { 2007 }, pages = { 205319 } }

TY - JOUR AU - S. Lazic AU - E. Gallardo AU - J. M. Calleja AU - F. Agullo-Rueda AU - J. Grandal AU - M. A. Sánchez-García AU - E. Calleja AU - E. Luna AU - A. Trampert TI - Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 76 SP - 205319 PY - 2007/01/01

Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs

@article{ author = { J. Miguel-Sanchez and A. Guzman and U. Jahn and E. Luna and E. Munoz }, title = { Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs }, journal = { Microelectronics Journal }, volume = { 37 }, year = { 2006 }, pages = { 1552 } }

TY - JOUR AU - J. Miguel-Sanchez AU - A. Guzman AU - U. Jahn AU - E. Luna AU - E. Munoz TI - Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs JF - Microelectronics Journal JA - Microelectron. J. J1 - MiJo VL - 37 SP - 1552 PY - 2006/07/11

Critical parameters for the molecular beam epitaxial growth of 1.55 μm (Ga,In)(N,As) multiple quantum wells

@article{ author = { F. Ishikawa and E. Luna and A. Trampert and K. H. Ploog }, title = { Critical parameters for the molecular beam epitaxial growth of 1.55 <span class="math"><em>μ</em></span>m (Ga,In)(N,As) multiple quantum wells }, journal = { Applied Physics Letters }, volume = { 89 }, year = { 2006 }, pages = { 181910 } }

TY - JOUR AU - F. Ishikawa AU - E. Luna AU - A. Trampert AU - K. H. Ploog TI - Critical parameters for the molecular beam epitaxial growth of 1.55 <span class="math"><em>μ</em></span>m (Ga,In)(N,As) multiple quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 89 SP - 181910 PY - 2006/01/01

Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect

@article{ author = { E. Luna and A. Trampert and A. Guzman and E. Calleja }, title = { Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect }, journal = { Journal of Applied Physics }, volume = { 98 }, year = { 2005 }, pages = { 044510 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - A. Guzman AU - E. Calleja TI - Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 98 SP - 044510 PY - 2005/01/01