PDI -> Staff ->

Prof. Dr. Henning Riechert

Director

Henning Riechert

phone: +49 30 20377 365

room: 0613

email: riechert@pdi-berlin.de

 

 

Research interests:

Epitaxy, Physics and Applications of III-V Semiconductors, Optoelectronics, Materials for Nanoelectronics

 

 

21 Author Y. Cho , S. Sadofev , S. Fernández-Garrido , R. Calarco , H. Riechert , Z. Galazka , R. Uecker , O. Brandt
Title

Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

Source Appl. Surf. Sci. , 369 , 159 ( 2016 )
DOI : 10.1016/j.apsusc.2016.01.268 | 2735 Cite : Bibtex RIS
Y. Cho, S. Sadofev, S. Fernández-Garrido, R. Calarco, H. Riechert, Z. Galazka, R. Uecker, and O. Brandt

22 Author M. Musolino , D. v. Treeck , A. Tahraoui , L. Scarparo , C. De Santi , M. Meneghini , E. Zanoni , L. Geelhaar , H. Riechert
Title

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Source J. Appl. Phys. , 119 , 044502 ( 2016 )
DOI : 10.1063/1.4940949 | Download: PDF | 2760 Cite : Bibtex RIS
M. Musolino, D. v. Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, and H. Riechert

23 Author N.M. Bom , G.V. Soares , M.H. Oliveira, Jr. , J. M. J. Lopes , H. Riechert , C. Radtke
Title

Water incorporation in graphene transferred onto SiO2/Si investigated by isotopic labeling

Source J. Phys. Chem. C , 120 (1) , 201 ( 2016 )
DOI : 10.1021/acs.jpcc.5b06780 | 2785 Cite : Bibtex RIS
N.M. Bom, G.V. Soares, M.H. Oliveira, Jr., J. M. J. Lopes, H. Riechert, and C. Radtke

24 Author J. E. Boschker , L. A. Galves , T. Flissikowski , J. M. J. Lopes , H. Riechert , R. Calarco
Title

Coincident-site lattice matching during van der Waals epitaxy

Source Sci. Rep. , 5 , 18079 ( 2015 )
DOI : doi:10.1038/srep18079 | Download: PDF | 2728 Cite : Bibtex RIS
J. E. Boschker, L. A. Galves, T. Flissikowski, J. M. J. Lopes, H. Riechert, and R. Calarco

25 Author J. K. Zettler , P. Corfdir , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Title

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Source Nanotechnol. , 26 , 445604 ( 2015 )
DOI : 10.1088/0957-4484/26/44/445604 | Download arXiv: 1508.06266 | 2712 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

26 Author F. Isa , C. Chèze , M. Siekacz , C. Hauswald , J. Lähnemann , S. Fernández-Garrido , T. Kreilinger , M. Ramsteiner , Y. A. Rojas Dasilva , O. Brandt , G. Isella , R. Erni , R. Calarco , H. Riechert , L. Miglio
Title

Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy

Source Cryst. Growth Des. , 15 , 4886 ( 2015 )
DOI : 10.1021/acs.cgd.5b00727 | 2720 Cite : Bibtex RIS
F. Isa, C. Chèze, M. Siekacz, C. Hauswald, J. Lähnemann, S. Fernández-Garrido, T. Kreilinger, M. Ramsteiner, Y. A. Rojas Dasilva, O. Brandt, G. Isella, R. Erni, R. Calarco, H. Riechert, and L. Miglio

27 Author T. Schumann , J. M. J. Lopes , J. M. Wofford , M.H. Oliveira Jr. , M. Dubslaff , M. Hanke , U. Jahn , L. Geelhaar , H. Riechert
Title

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

Source J. Cryst. Growth , 425 , 274 ( 2015 )
DOI : 10.1016/j.jcrysgro.2015.02.060 | 2670 Cite : Bibtex RIS
T. Schumann, J. M. J. Lopes, J. M. Wofford, M.H. Oliveira Jr., M. Dubslaff, M. Hanke, U. Jahn, L. Geelhaar, and H. Riechert

28 Author H. Li , L. Geelhaar , H. Riechert , C. Draxl
Title

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

Source Phys. Rev. Lett. , 115 , 085503 ( 2015 )
DOI : 10.1103/PhysRevLett.115.085503 | Download: PDF | 2651 Cite : Bibtex RIS
H. Li, L. Geelhaar, H. Riechert, and C. Draxl

29 Author M.H. Oliveira Jr. , J. M. J. Lopes , T. Schumann , L. A. Galves , M. Ramsteiner , K. Berlin , A. Trampert , H. Riechert
Title

Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces

Source Nat. Commun. , 6 , 7632 ( 2015 )
DOI : 10.1038/ncomms8632 | 2671 Cite : Bibtex RIS
M.H. Oliveira Jr., J. M. J. Lopes, T. Schumann, L. A. Galves, M. Ramsteiner, K. Berlin, A. Trampert, and H. Riechert

30 Author J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Title

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

Source Cryst. Growth Des. , 15 , 4104 ( 2015 )
DOI : 10.1021/acs.cgd.5b00690 | 2697 Cite : Bibtex RIS
J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido