PDI -> Staff ->

Prof. Dr. Henning Riechert

Director

Henning Riechert

phone: +49 30 20377 365

room: 0613

email: riechert@pdi-berlin.de

 

 

Research interests:

Epitaxy, Physics and Applications of III-V Semiconductors, Optoelectronics, Materials for Nanoelectronics

 

 

31 Author M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert
Title

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

Source Nano Lett. , 15 , 3743 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00251 | 2698 Cite : Bibtex RIS
M. Wölz, C. Hauswald, T. Flissikowski, T. Gotschke, S. Fernández-Garrido, O. Brandt, H. T. Grahn, L. Geelhaar, and H. Riechert

32 Author S. Nakhaie , J. M. Wofford , T. Schumann , U. Jahn , M. Ramsteiner , M. Hanke , J. M. J. Lopes , H. Riechert
Title

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Source Appl. Phys. Lett. , 106 , 213108 ( 2015 )
DOI : 10.1063/1.4921921 | Download: PDF | 2696 Cite : Bibtex RIS
S. Nakhaie, J. M. Wofford, T. Schumann, U. Jahn, M. Ramsteiner, M. Hanke, J. M. J. Lopes, and H. Riechert

33 Author A.V. Kolobov , P. Fons , M. Krbal , J. Tominaga , A. Giussani , K. Perumal , H. Riechert , R. Calarco , T. Uruga
Title

Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: a XANES study

Source J. Appl. Phys. , 117 , 125308 ( 2015 )
DOI : 10.1063/1.4916529 | Download: PDF | 2701 Cite : Bibtex RIS
A.V. Kolobov, P. Fons, M. Krbal, J. Tominaga, A. Giussani, K. Perumal, H. Riechert, R. Calarco, and T. Uruga

34 Author M. Musolino , M. Meneghini , L. Scarparo , C. De Santi , A. Tahraoui , L. Geelhaar , E. Zanoni , H. Riechert
Title

Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

Source Proc. SPIE , 9363 , 936325 ( 2015 )
DOI : 10.1117/12.2077438 | Download: PDF | 2694 Cite : Bibtex RIS
M. Musolino, M. Meneghini, L. Scarparo, C. De Santi, A. Tahraoui, L. Geelhaar, E. Zanoni, and H. Riechert

35 Author M. Musolino , A. Tahraoui , S. Fernández-Garrido , O. Brandt , A. Trampert , L. Geelhaar , H. Riechert
Title

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Source Nanotechnol. , 26 , 085605 ( 2015 )
DOI : 10.1088/0957-4484/26/8/085605 | Download arXiv: 1410.7546 | 2564 Cite : Bibtex RIS
M. Musolino, A. Tahraoui, S. Fernández-Garrido, O. Brandt, A. Trampert, L. Geelhaar, and H. Riechert

36 Author J. E. Boschker , M. Boniardi , A. Redaelli , H. Riechert , R. Calarco
Title

Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by Molecular Beam Epitaxy

Source Appl. Phys. Lett. , 106 , 023117 ( 2015 )
DOI : 10.1063/1.4906060 | Download: PDF | 2669 Cite : Bibtex RIS
J. E. Boschker, M. Boniardi, A. Redaelli, H. Riechert, and R. Calarco

37 Author J. Kamimura , M. Ramsteiner , L. Geelhaar , H. Riechert
Title

Si doping effects on (In,Ga)N nanowires

Source J. Appl. Phys. , 116 , 244310 ( 2014 )
DOI : 10.1063/1.4905257 | Download: PDF | 2632 Cite : Bibtex RIS
J. Kamimura, M. Ramsteiner, L. Geelhaar, and H. Riechert

38 Author R. N. Wang , J. E. Boschker , E. Bruyer , D. Di Sante , S. Picozzi , K. Perumal , A. Giussani , H. Riechert , R. Calarco
Title

Towards truly single crystalline GeTe films: The relevance of the substrate surface

Source J. Phys. Chem. C , 118 (51) , 29724 ( 2014 )
DOI : 10.1021/jp507183f | 2625 Cite : Bibtex RIS
R. N. Wang, J. E. Boschker, E. Bruyer, D. Di Sante, S. Picozzi, K. Perumal, A. Giussani, H. Riechert, and R. Calarco

39 Author C. Somaschini , A. Biermanns , S. Bietti , G. Bussone , A. Trampert , S. Sanguinetti , H. Riechert , U. Pietsch , L. Geelhaar
Title

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

Source Nanotechnol. , 25 , 485602 ( 2014 )
DOI : 10.1088/0957-4484/25/48/485602 | 2502 Cite : Bibtex RIS
C. Somaschini, A. Biermanns, S. Bietti, G. Bussone, A. Trampert, S. Sanguinetti, H. Riechert, U. Pietsch, and L. Geelhaar

40 Author J. M. Wofford , M. H. Oliveira Jr. , T. Schumann , B. Jenichen , M. Ramsteiner , U. Jahn , S. Fölsch , J. M. J. Lopes , H. Riechert
Title

Molecular beam epitaxy of graphene on ultra-smooth nickel: Growth mode and substrate interactions

Source New J. Phys. , 16 , 093055 ( 2014 )
DOI : 10.1088/1367-2630/16/9/093055 | Download: PDF | 2600 Cite : Bibtex RIS
J. M. Wofford, M. H. Oliveira Jr., T. Schumann, B. Jenichen, M. Ramsteiner, U. Jahn, S. Fölsch, J. M. J. Lopes, and H. Riechert