PDI -> Staff ->

Dr. Jonas Lähnemann

Scientist

Jonas Lähnemann

phone: +49 30 20377 282

room: 0519

email: jonas@pdi-berlin.de

 

Department: Semiconductor Spectroscopy

Core research areas: III-V nanowires for optoelectronics

 

Research interests:

Luminescence spectroscopy, Analytical scanning electron microscopy, Semiconductor nanowires, III-V semiconductors for optoelectronic applications, Thin-film solar cells

 

 

1 Author C. Chèze , F. Feix , J. Lähnemann , T. Flissikowski , M. Krysko , P. Wolny , H. Turski , C. Skierbiszewski , O. Brandt
Title

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

Source Appl. Phys. Lett. , 112 , 022102 ( 2018 )
DOI : 10.1063/1.5009184 | Download: PDF | 2987 Cite : Bibtex RIS
C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, M. Krysko, P. Wolny, H. Turski, C. Skierbiszewski, and O. Brandt

2 Author P. Vogt , O. Brandt , H. Riechert , J. Lähnemann , O. Bierwagen
Title

Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors

Source Phys. Rev. Lett. , 119 , 196001 ( 2017 )
DOI : 10.1103/PhysRevLett.119.196001 | Download: PDF | 2925 Cite : Bibtex RIS
P. Vogt, O. Brandt, H. Riechert, J. Lähnemann, and O. Bierwagen

3 Author C. B. Lim , A. Ajay , J. Lähnemann , C. Bougerol , E. Monroy
Title

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Source Semicond. Sci. Technol. , 32 , 125002 ( 2017 )
DOI : 10.1088/1361-6641/aa919c | 2991 Cite : Bibtex RIS
C. B. Lim, A. Ajay, J. Lähnemann, C. Bougerol, and E. Monroy

4 Author S. Assali , J. Lähnemann , T. Vu , K. D. Jöns , L. Gagliano , M. A. Verheijen , N. Akopian , E. P. A. M. Bakkers , J. E. M. Haverkort
Title

Crystal phase quantum well emission with digital control

Source Nano Lett. , 17 , 6062 ( 2017 )
DOI : 10.1021/acs.nanolett.7b02489 | 2990 Cite : Bibtex RIS
S. Assali, J. Lähnemann, T. Vu, K. D. Jöns, L. Gagliano, M. A. Verheijen, N. Akopian, E. P. A. M. Bakkers, and J. E. M. Haverkort

5 Author M. Spies , M. I. den Hertog , P. Hille , J. Schörmann , J. Polaczyński , B. Gayral , M. Eickhoff , E. Monroy , J. Lähnemann
Title

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

Source Nano Lett. , 17 , 4231 ( 2017 )
DOI : 10.1021/acs.nanolett.7b01118 | 2950 Cite : Bibtex RIS
M. Spies, M. I. den Hertog, P. Hille, J. Schörmann, J. Polaczyński, B. Gayral, M. Eickhoff, E. Monroy, and J. Lähnemann

6 Author J. Kamimura , P. Bogdanoff , F. F. Abdi , J. Lähnemann , R. van de Krol , H. Riechert , L. Geelhaar
Title

Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte

Source J. Phys. Chem. C , 121 , 12540 ( 2017 )
DOI : 10.1021/acs.jpcc.7b02253 | 2908 Cite : Bibtex RIS
J. Kamimura, P. Bogdanoff, F. F. Abdi, J. Lähnemann, R. van de Krol, H. Riechert, and L. Geelhaar

7 Author J. Lähnemann , T. Flissikowski , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt , U. Jahn
Title

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime

Source Nanotechnol. , 27 , 455706 ( 2016 )
DOI : 10.1088/0957-4484/27/45/455706 | Download arXiv: 1607.03397 | 2849 Cite : Bibtex RIS
J. Lähnemann, T. Flissikowski, M. Wölz, L. Geelhaar, H. T. Grahn, O. Brandt, and U. Jahn

8 Author S. Fernández-Garrido , J. Lähnemann , C. Hauswald , M. Korytov , M. Albrecht , C. Chèze , C. Skierbiszewski , O. Brandt
Title

Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy

Source Phys. Rev. Applied , 6 , 034017-01 ( 2016 )
DOI : 10.1103/PhysRevApplied.6.034017 | Download arXiv: arXiv:1510.06512 | 2743 Cite : Bibtex RIS
S. Fernández-Garrido, J. Lähnemann, C. Hauswald, M. Korytov, M. Albrecht, C. Chèze, C. Skierbiszewski, and O. Brandt

9 Author U. Jahn , M. Musolino , J. Lähnemann , P. Dogan , S. Fernández-Garrido , J.F. Wang , K. Xu , D. Cai , L.F. Bian , X.J. Gong , H. Yang
Title

The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures

Source Semicond. Sci. Technol. , 31 , 065018 ( 2016 )
DOI : 10.1088/0268-1242/31/6/065018 | 2775 Cite : Bibtex RIS
U. Jahn, M. Musolino, J. Lähnemann, P. Dogan, S. Fernández-Garrido, J.F. Wang, K. Xu, D. Cai, L.F. Bian, X.J. Gong, and H. Yang

10 Author J. Lähnemann , P. Corfdir , F. Feix , J. Kamimura , T. Flissikowski , H. T. Grahn , L. Geelhaar , O. Brandt
Title

Radial Stark effect in (In,Ga)N nanowires

Source Nano Lett. , 16 , 917 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03748 | 2744 Cite : Bibtex RIS
J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar, and O. Brandt