PDI -> Staff ->

Dr. Jonas Lähnemann

Scientist

Jonas Lähnemann

phone: +49 30 20377 450

room: 0530

email: jonas@pdi-berlin.de

 

Department: Semiconductor Spectroscopy

Core research areas: Nanoanalytics , III-V nanowires for optoelectronics

 

Research interests:

Luminescence spectroscopy, Analytical scanning electron microscopy, Semiconductor nanowires, III-V semiconductors for optoelectronic applications, Thin-film solar cells

 

 

21 Author J. Kamimura , P. Bogdanoff , F. F. Abdi , J. Lähnemann , R. van de Krol , H. Riechert , L. Geelhaar
Title

Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte

Source J. Phys. Chem. C , 121 , 12540 ( 2017 )
DOI : 10.1021/acs.jpcc.7b02253 | 2908 Cite : Bibtex RIS
J. Kamimura, P. Bogdanoff, F. F. Abdi, J. Lähnemann, R. van de Krol, H. Riechert, and L. Geelhaar

22 Author J. Lähnemann , T. Flissikowski , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt , U. Jahn
Title

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime

Source Nanotechnology , 27 , 455706 ( 2016 )
DOI : 10.1088/0957-4484/27/45/455706 | Download arXiv: 1607.03397 | 2849 Cite : Bibtex RIS
J. Lähnemann, T. Flissikowski, M. Wölz, L. Geelhaar, H. T. Grahn, O. Brandt, and U. Jahn

23 Author S. Fernández-Garrido , J. Lähnemann , C. Hauswald , M. Korytov , M. Albrecht , C. Chèze , C. Skierbiszewski , O. Brandt
Title

Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy

Source Phys. Rev. Appl. , 6 , 034017-01 ( 2016 )
DOI : 10.1103/PhysRevApplied.6.034017 | Download arXiv: arXiv:1510.06512 | 2743 Cite : Bibtex RIS
S. Fernández-Garrido, J. Lähnemann, C. Hauswald, M. Korytov, M. Albrecht, C. Chèze, C. Skierbiszewski, and O. Brandt

24 Author U. Jahn , M. Musolino , J. Lähnemann , P. Dogan , S. Fernández-Garrido , J.F. Wang , K. Xu , D. Cai , L.F. Bian , X.J. Gong , H. Yang
Title

The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures

Source Semicond. Sci. Technol. , 31 , 065018 ( 2016 )
DOI : 10.1088/0268-1242/31/6/065018 | 2775 Cite : Bibtex RIS
U. Jahn, M. Musolino, J. Lähnemann, P. Dogan, S. Fernández-Garrido, J.F. Wang, K. Xu, D. Cai, L.F. Bian, X.J. Gong, and H. Yang

25 Author J. Lähnemann , P. Corfdir , F. Feix , J. Kamimura , T. Flissikowski , H. T. Grahn , L. Geelhaar , O. Brandt
Title

Radial Stark effect in (In,Ga)N nanowires

Source Nano Lett. , 16 , 917 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03748 | Download arXiv: 1601.07201 | 2744 Cite : Bibtex RIS
J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar, and O. Brandt

26 Author F. Isa , C. Chèze , M. Siekacz , C. Hauswald , J. Lähnemann , S. Fernández-Garrido , T. Kreilinger , M. Ramsteiner , Y. A. Rojas Dasilva , O. Brandt , G. Isella , R. Erni , R. Calarco , H. Riechert , L. Miglio
Title

Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy

Source Cryst. Growth Des. , 15 , 4886 ( 2015 )
DOI : 10.1021/acs.cgd.5b00727 | 2720 Cite : Bibtex RIS
F. Isa, C. Chèze, M. Siekacz, C. Hauswald, J. Lähnemann, S. Fernández-Garrido, T. Kreilinger, M. Ramsteiner, Y. A. Rojas Dasilva, O. Brandt, G. Isella, R. Erni, R. Calarco, H. Riechert, and L. Miglio

27 Author P. Corfdir , C. Hauswald , J. K. Zettler , T. Flissikowski , J. Lähnemann , S. Fernández-Garrido , L. Geelhaar , H. T. Grahn , O. Brandt
Title

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

Source Phys. Rev. B , 90 , 195309 ( 2014 )
DOI : 10.1103/PhysRevB.90.195309 | Download: PDF | 2636 Cite : Bibtex RIS
P. Corfdir, C. Hauswald, J. K. Zettler, T. Flissikowski, J. Lähnemann, S. Fernández-Garrido, L. Geelhaar, H. T. Grahn, and O. Brandt

28 Author J. Lähnemann , U. Jahn , O. Brandt , T. Flissikowski , P. Dogan , H. T. Grahn
Title

Luminescence associated with stacking faults in GaN

Source J. Phys. D: Appl. Phys. , 47 , 423001 ( 2014 )
DOI : 10.1088/0022-3727/47/42/423001 | Download arXiv: 1405.1261 | 2584 Cite : Bibtex RIS
J. Lähnemann, U. Jahn, O. Brandt, T. Flissikowski, P. Dogan, and H. T. Grahn

29 Author J. Lähnemann , C. Hauswald , M. Wölz , U. Jahn , M. Hanke , L. Geelhaar , O. Brandt
Title

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy

Source J. Phys. D: Appl. Phys. , 47 , 394010 ( 2014 )
DOI : 10.1088/0022-3727/47/39/394010 | Download arXiv: 1405.1507 | 2571 Cite : Bibtex RIS
J. Lähnemann, C. Hauswald, M. Wölz, U. Jahn, M. Hanke, L. Geelhaar, and O. Brandt

30 Author M. Musolino , A. Tahraoui , F. Limbach , J. Lähnemann , U. Jahn , O. Brandt , L. Geelhaar , H. Riechert
Title

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

Source Appl. Phys. Lett. , 105 , 083505 ( 2014 )
DOI : 10.1063/1.4894241 | Download: PDF | 2573 Cite : Bibtex RIS
M. Musolino, A. Tahraoui, F. Limbach, J. Lähnemann, U. Jahn, O. Brandt, L. Geelhaar, and H. Riechert