PDI -> Staff ->

Dr. João Marcelo Lopes

Senior Scientist

João Marcelo Lopes

phone: +49 30 20377 327

room: 0717

email: lopes@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication

 

 

41 Author N. M. Bom , M.H. Oliveira Jr. , G.V. Soares , C. Radtke , J. M. J. Lopes , H. Riechert
Title

Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments

Source Carbon , 78 , 298 ( 2014 )
DOI : 10.1016/j.carbon.2014.07.006 | 2546 Cite : Bibtex RIS
N. M. Bom, M.H. Oliveira Jr., G.V. Soares, C. Radtke, J. M. J. Lopes, and H. Riechert

42 Author T. Schumann , M. Dubslaff , M. H. Oliveira Jr. , M. Hanke , J. M. J. Lopes , H. Riechert
Title

The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

Source Phys. Rev. B , 90 , 041403(R) ( 2014 )
DOI : 10.1103/PhysRevB.90.041403 | Download: PDF | 2587 Cite : Bibtex RIS
T. Schumann, M. Dubslaff, M. H. Oliveira Jr., M. Hanke, J. M. J. Lopes, and H. Riechert

43 Author T. Schumann , M. Dubslaff , M. H. Oliveira, Jr. , M. Hanke , F. Fromm , T. Seyller , L. Nemec , V. Blum , M. Scheffler , J. M. J. Lopes , H. Riechert
Title

Structural investigation of nanocrystalline graphene grown on (6 sqrt 3 times 6 sqrt 3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

Source New J. Phys. , 15 , 123034 ( 2013 )
DOI : 10.1088/1367-2630/15/12/123034 | Download: PDF | 2523 Cite : Bibtex RIS
T. Schumann, M. Dubslaff, M. H. Oliveira, Jr., M. Hanke, F. Fromm, T. Seyller, L. Nemec, V. Blum, M. Scheffler, J. M. J. Lopes, and H. Riechert

44 Author M. H. Oliveira Jr. , T. Schumann , F. Fromm , R. Koch , M. Ostler , M. Ramsteiner , T. Seyller , J. M. J. Lopes , H. Riechert
Title

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

Source Carbon , 52 , 83 ( 2013 )
DOI : 10.1016/j.carbon.2012.09.008 | 2314 Cite : Bibtex RIS
M. H. Oliveira Jr., T. Schumann, F. Fromm, R. Koch, M. Ostler, M. Ramsteiner, T. Seyller, J. M. J. Lopes, and H. Riechert

45 Author M. H. Oliveira Jr. , T. Schumann , R. Gargallo-Caballero , F. Fromm , T. Seyller , M. Ramsteiner , A. Trampert , L. Geelhaar , J. M. J. Lopes , H. Riechert
Title

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

Source Carbon , 56 , 339 ( 2013 )
2374 Cite : Bibtex RIS
M. H. Oliveira Jr., T. Schumann, R. Gargallo-Caballero, F. Fromm, T. Seyller, M. Ramsteiner, A. Trampert, L. Geelhaar, J. M. J. Lopes, and H. Riechert

46 Author F. Fromm , M. H. Oliveira Jr. , A. Molina-Sanchez , M. Hundhausen , J. M. J. Lopes , H. Riechert , L. Wirtz , T. Seyller
Title

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Source New J. Phys. , 15 , 043031 ( 2013 )
Download: PDF | 2396 Cite : Bibtex RIS
F. Fromm, M. H. Oliveira Jr., A. Molina-Sanchez, M. Hundhausen, J. M. J. Lopes, H. Riechert, L. Wirtz, and T. Seyller

47 Author P. V. Santos , T. Schumann , M. H. Oliveira Jr. , J. M. J. Lopes , H. Riechert
Title

Acousto-electric transport in epitaxial monolayer graphene on SiC

Source Appl. Phys. Lett. , 102 , 221907 ( 2013 )
Download: PDF | 2405 Cite : Bibtex RIS
P. V. Santos, T. Schumann, M. H. Oliveira Jr., J. M. J. Lopes, and H. Riechert

48 Author F. Ducroquet , O. Engström , H. D. B. Gottlob , J. M. J. Lopes , J. Schubert
Title

Admittance spectroscopy of Si/LaLuO3 and Si/GdSiO MOS structures

Source ECS Trans. , 45 , 103 ( 2012 )
2301 Cite : Bibtex RIS
F. Ducroquet, O. Engström, H. D. B. Gottlob, J. M. J. Lopes, and J. Schubert

49 Author T. Schumann , K.-J. Friedland , M. H. Oliveira Jr. , A. Tahraoui , J. M. J. Lopes , H. Riechert
Title

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

Source Phys. Rev. B , 85 , 235402 ( 2012 )
Download: PDF | 2307 Cite : Bibtex RIS
T. Schumann, K.-J. Friedland, M. H. Oliveira Jr., A. Tahraoui, J. M. J. Lopes, and H. Riechert

50 Author J. M. J. Lopes , E. Durvgun Özben , M. Schnee , R. Luptak , A. Nichau , A. Tiedemann , W. Yu , Q. T. Zhao , A. Besmehn , U. Breuer , M. Luysberg , St. Lenk , J. Schubert , S. Mantl
Title

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

Source ECS Trans. , 35 , 461 ( 2011 )
2184 Cite : Bibtex RIS
J. M. J. Lopes, E. Durvgun Özben, M. Schnee, R. Luptak, A. Nichau, A. Tiedemann, W. Yu, Q. T. Zhao, A. Besmehn, U. Breuer, M. Luysberg, St. Lenk, J. Schubert, and S. Mantl