PDI -> Staff ->

Dr. Caroline Chèze

Scientist

phone: +49 30 20377 362

room: 0728

email: cheze@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication

 

 

1 Author T. Ernst , C. Chèze , R. Calarco
Title

InN and GaN/InN monolayers grown on ZnO {0001}

Source J. Appl. Phys. , 124 , 115305 ( 2018 )
DOI : 10.1063/1.5041880 | Download: PDF | 3030 Cite : Bibtex RIS
T. Ernst, C. Chèze, and R. Calarco

2 Author C. Chèze , F. Feix , J. Lähnemann , T. Flissikowski , M. Krysko , P. Wolny , H. Turski , C. Skierbiszewski , O. Brandt
Title

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

Source Appl. Phys. Lett. , 112 , 022102 ( 2018 )
DOI : 10.1063/1.5009184 | Download: PDF | 2987 Cite : Bibtex RIS
C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, M. Krysko, P. Wolny, H. Turski, C. Skierbiszewski, and O. Brandt

3 Author L. Lymperakis , T. Schulz , C. Freysoldt , M. Anikeeva , Z. Chen , X. Zheng , B. Shen , C. Chèze , M. Siekacz , X. Q. Wang , M. Albrecht , J. Neugebauer
Title

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

Source PRMaterials , 2 , no. ( 2018 )
DOI : 10.1103/PhysRevMaterials.2.011601 | 3011 Cite : Bibtex RIS
L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, and J. Neugebauer

4 Author C. Chèze , R. Calarco
Title

Self-limited In incorporation in (In,Ga)N/GaN short-period superlattices

Source Nanosci. Nanotechnol. Lett. , 9 , 1118 ( 2017 )
DOI : 10.1166/nnl.2017.2442 | 2911 Cite : Bibtex RIS
C. Chèze, and R. Calarco

5 Author C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco
Title

In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

Source Appl. Phys. Lett. , 110 , 072104 ( 2017 )
DOI : 10.1063/1.4976198 | Download: PDF | 2878 Cite : Bibtex RIS
C. Chèze, F. Feix, M. Anikeeva, T. Schulz, M. Albrecht, H. Riechert, O. Brandt, and R. Calarco

6 Author C. Chèze , M. Siekacz , F. Isa , B. Jenichen , F. Feix , J. Buller , T. Schulz , M. Albrecht , C. Skierbiszewski , R. Calarco , H. Riechert
Title

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Source J. Appl. Phys. , 120 , 125307 ( 2016 )
DOI : 10.1063/1.4963273 | Download: PDF | 2789 Cite : Bibtex RIS
C. Chèze, M. Siekacz, F. Isa, B. Jenichen, F. Feix, J. Buller, T. Schulz, M. Albrecht, C. Skierbiszewski, R. Calarco, and H. Riechert

7 Author S. Fernández-Garrido , J. Lähnemann , C. Hauswald , M. Korytov , M. Albrecht , C. Chèze , C. Skierbiszewski , O. Brandt
Title

Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy

Source Phys. Rev. Applied , 6 , 034017-01 ( 2016 )
DOI : 10.1103/PhysRevApplied.6.034017 | Download arXiv: arXiv:1510.06512 | 2743 Cite : Bibtex RIS
S. Fernández-Garrido, J. Lähnemann, C. Hauswald, M. Korytov, M. Albrecht, C. Chèze, C. Skierbiszewski, and O. Brandt

8 Author F. Feix , T. Flissikowski , C. Chèze , R. Calarco , H. T. Grahn , O. Brandt
Title

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

Source Appl. Phys. Lett. , 109 , 042104 ( 2016 )
DOI : 10.1063/1.4960006 | Download: PDF | 2821 Cite : Bibtex RIS
F. Feix, T. Flissikowski, C. Chèze, R. Calarco, H. T. Grahn, and O. Brandt

9 Author F. Isa , C. Chèze , M. Siekacz , C. Hauswald , J. Lähnemann , S. Fernández-Garrido , T. Kreilinger , M. Ramsteiner , Y. A. Rojas Dasilva , O. Brandt , G. Isella , R. Erni , R. Calarco , H. Riechert , L. Miglio
Title

Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy

Source Cryst. Growth Des. , 15 , 4886 ( 2015 )
DOI : 10.1021/acs.cgd.5b00727 | 2720 Cite : Bibtex RIS
F. Isa, C. Chèze, M. Siekacz, C. Hauswald, J. Lähnemann, S. Fernández-Garrido, T. Kreilinger, M. Ramsteiner, Y. A. Rojas Dasilva, O. Brandt, G. Isella, R. Erni, R. Calarco, H. Riechert, and L. Miglio

10 Author P. Dogan , C. Chèze , R. Calarco
Title

III-V semiconductor nanowires: nitrides (N-based; III-N)

Source Woodhead , 4 , 125 ( 2015 )
DOI : ISBN 9781782422532 | 2652 Cite : Bibtex RIS
P. Dogan, C. Chèze, and R. Calarco