David van Treeck (D)

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

@article{ author = { G. Calabrese and D. v. Treeck and V. M. Kaganer and O. Konovalov and P. Corfdir and C. Sinito and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires }, journal = { Acta Materialia }, volume = { 195 }, year = { 2020 }, pages = { 87 } }

TY - JOUR AU - G. Calabrese AU - D. v. Treeck AU - V. M. Kaganer AU - O. Konovalov AU - P. Corfdir AU - C. Sinito AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires JF - Acta Materialia JA - Acta Mat. J1 - VL - 195 SP - 87 PY - 2020/05/15

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

@article{ author = { D. v. Treeck and Sergio Fernández-Garrido and L. Geelhaar }, title = { Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 013404 } }

TY - JOUR AU - D. v. Treeck AU - Sergio Fernández-Garrido AU - L. Geelhaar TI - Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 013404 PY - 2020/01/27

Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble

@article{ author = { D. v. Treeck and J. Ledig and G. Scholz and J. Lähnemann and M. Musolino and A. Tahraoui and O. Brandt and A. Waag and H. Riechert and L. Geelhaar }, title = { Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble }, journal = { Beilstein Journal of Nanotechnology }, volume = { 10 }, year = { 2019 }, pages = { 1177 } }

TY - JOUR AU - D. v. Treeck AU - J. Ledig AU - G. Scholz AU - J. Lähnemann AU - M. Musolino AU - A. Tahraoui AU - O. Brandt AU - A. Waag AU - H. Riechert AU - L. Geelhaar TI - Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble JF - Beilstein Journal of Nanotechnology JA - Beilstein J. Nanotechnol. J1 - VL - 10 SP - 1177 PY - 2019/06/05

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. v. Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. v. Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25

Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces

@article{ author = { P. Corfdir and H. Li and O. Marquardt and G. Gao and M. R. Molas and J. K. Zettler and D. v. Treeck and T. Flissikowski and M. Potemski and C. Draxl and A. Trampert and S. Fernández-Garrido and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 247 } }

TY - JOUR AU - P. Corfdir AU - H. Li AU - O. Marquardt AU - G. Gao AU - M. R. Molas AU - J. K. Zettler AU - D. v. Treeck AU - T. Flissikowski AU - M. Potemski AU - C. Draxl AU - A. Trampert AU - S. Fernández-Garrido AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 247 PY - 2018/01/10

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

@article{ author = { D. v. Treeck and G. Calabrese and J. Goertz and V. M. Kaganer and O. Brandt and S. Fernández-Garrido and L. Geelhaar }, title = { Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films }, journal = { Nano Research }, volume = { 11, Issue 1 }, year = { 2018 }, pages = { 565 } }

TY - JOUR AU - D. v. Treeck AU - G. Calabrese AU - J. Goertz AU - V. M. Kaganer AU - O. Brandt AU - S. Fernández-Garrido AU - L. Geelhaar TI - Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films JF - Nano Research JA - Nano Res. J1 - VL - 11, Issue 1 SP - 565 PY - 2018/01/01

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires

@article{ author = { J. Bartolomé and M. Hanke and D. v. Treeck and A. Trampert }, title = { Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4654 } }

TY - JOUR AU - J. Bartolomé AU - M. Hanke AU - D. v. Treeck AU - A. Trampert TI - Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4654 PY - 2017/07/22

A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles

@article{ author = { M. Musolino and A. Tahraoui and D. v. Treeck and L. Geelhaar and H. Riechert }, title = { A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 275203 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - D. v. Treeck AU - L. Geelhaar AU - H. Riechert TI - A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 27 SP - 275203 PY - 2016/05/27

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

@article{ author = { M. Musolino and D. v. Treeck and A. Tahraoui and L. Scarparo and C. De Santi and M. Meneghini and E. Zanoni and L. Geelhaar and H. Riechert }, title = { A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires }, journal = { Journal of Applied Physics }, volume = { 119 }, year = { 2016 }, pages = { 044502 } }

TY - JOUR AU - M. Musolino AU - D. v. Treeck AU - A. Tahraoui AU - L. Scarparo AU - C. De Santi AU - M. Meneghini AU - E. Zanoni AU - L. Geelhaar AU - H. Riechert TI - A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 119 SP - 044502 PY - 2016/01/27