PhD Student
phone: +49 30 20377 361
room: 0711
email: treeck@pdi-berlin.de
Department: Epitaxy
Core research areas: III-V nanowires for optoelectronics
1 | Author | D. v. Treeck , J. Ledig , G. Scholz , J. Lähnemann , M. Musolino , A. Tahraoui , O. Brandt , A. Waag , H. Riechert , L. Geelhaar |
Title |
Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble |
|
Source | Beilstein J. Nanotechnol. , 10 , 1177 ( 2019 ) | |
DOI : 10.3762/bjnano.10.117 | Cite : Bibtex RIS |
2 | Author | G. Calabrese , G. Gao , D. v. Treeck , P. Corfdir , C. Sinito , T. Auzelle , A. Trampert , L. Geelhaar , O. Brandt , S. Fernández-Garrido |
Title |
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 |
|
Source | Nanotechnol. , 30 , 114001 ( 2019 ) | |
DOI : 10.1088/1361-6528/aaf9c5 | Cite : Bibtex RIS |
3 | Author | P. Corfdir , H. Li , O. Marquardt , G. Gao , M. R. Molas , J. K. Zettler , D. v. Treeck , T. Flissikowski , M. Potemski , C. Draxl , A. Trampert , S. Fernández-Garrido , H. T. Grahn , O. Brandt |
Title |
Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces |
|
Source | Nano Lett. , 18 , 247 ( 2018 ) | |
DOI : 10.1021/acs.nanolett.7b03997 | Cite : Bibtex RIS |
4 | Author | D. v. Treeck , G. Calabrese , J. Goertz , V. M. Kaganer , O. Brandt , S. Fernández-Garrido , L. Geelhaar |
Title |
Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films |
|
Source | Nano Res. , 11, Issue 1 , 565 ( 2018 ) | |
DOI : 10.1007/s12274-017-1717-x | Cite : Bibtex RIS |
5 | Author | J. Bartolomé , M. Hanke , D. v. Treeck , A. Trampert |
Title |
Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires |
|
Source | Nano Lett. , 17 , 4654 ( 2017 ) | |
DOI : 10.1021/acs.nanolett.7b01136 | Cite : Bibtex RIS |
6 | Author | M. Musolino , A. Tahraoui , D. v. Treeck , L. Geelhaar , H. Riechert |
Title |
A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles |
|
Source | Nanotechnol. , 27 , 275203 ( 2016 ) | |
DOI : 10.1088/0957-4484/27/27/275203 | Cite : Bibtex RIS |
7 | Author | M. Musolino , D. v. Treeck , A. Tahraoui , L. Scarparo , C. De Santi , M. Meneghini , E. Zanoni , L. Geelhaar , H. Riechert |
Title |
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires |
|
Source | J. Appl. Phys. , 119 , 044502 ( 2016 ) | |
DOI : 10.1063/1.4940949 | Download: PDF | Cite : Bibtex RIS |