Dr. Manfred Ramsteiner

Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures

@article{ author = { R. Hey and Y.-J. Han and M. Giehler and M. Ramsteiner and H.T. Grahn and K. H. Ploog }, title = { Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures }, journal = { Journal of Crystal Growth }, volume = { 278 }, year = { 2005 }, pages = { 219 } }

TY - JOUR AU - R. Hey AU - Y.-J. Han AU - M. Giehler AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog TI - Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 278 SP - 219 PY - 2005/01/01

Combined hydride and metal organic vapor-phase epitaxy of GaN on sapphire

@article{ author = { G. S. Solomon and D. J. Miller and M. Ramsteiner and A. Trampert and O. Brandt and K. H. Ploog }, title = { Combined hydride and metal organic vapor-phase epitaxy of GaN on sapphire }, journal = { Applied Physics Letters }, volume = { 87 }, year = { 2005 }, pages = { 181912 } }

TY - JOUR AU - G. S. Solomon AU - D. J. Miller AU - M. Ramsteiner AU - A. Trampert AU - O. Brandt AU - K. H. Ploog TI - Combined hydride and metal organic vapor-phase epitaxy of GaN on sapphire JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 87 SP - 181912 PY - 2005/01/01

Highly anisotropic dispersion of surface acoustic waves in M-plane GaN layers grown on γ-LiAlO₂(100) [Erratum: Phys. Rev. B 70, 129901(E) (2004)]

@article{ author = { Y. Takagaki and C. Hucho and E. Wiebicke and Y. J. Sun and O. Brandt and M. Ramsteiner and K. H. Ploog }, title = { Highly anisotropic dispersion of surface acoustic waves in <em>M</em>-plane GaN layers grown on <span class="math"><em>γ</em></span>-LiAlO₂(100) [Erratum: Phys. Rev. B <strong>70</strong>, 129901(E) (2004)] }, journal = { Physical Review B: Solid State }, volume = { 69 }, year = { 2004 }, pages = { 115317 } }

TY - JOUR AU - Y. Takagaki AU - C. Hucho AU - E. Wiebicke AU - Y. J. Sun AU - O. Brandt AU - M. Ramsteiner AU - K. H. Ploog TI - Highly anisotropic dispersion of surface acoustic waves in <em>M</em>-plane GaN layers grown on <span class="math"><em>γ</em></span>-LiAlO₂(100) [Erratum: Phys. Rev. B <strong>70</strong>, 129901(E) (2004)] JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 69 SP - 115317 PY - 2004/01/01

Field-dependent nonlinear luminescence response of (In,Ga)N/GaN quantum wells

@article{ author = { U. Jahn and S. Dhar and M. Ramsteiner and K. Fujiwara }, title = { Field-dependent nonlinear luminescence response of (In,Ga)N/GaN quantum wells }, journal = { Physical Review B: Solid State }, volume = { 69 }, year = { 2004 }, pages = { 115323 } }

TY - JOUR AU - U. Jahn AU - S. Dhar AU - M. Ramsteiner AU - K. Fujiwara TI - Field-dependent nonlinear luminescence response of (In,Ga)N/GaN quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 69 SP - 115323 PY - 2004/01/01

Properties of InN layers grown on 6H-SiC(0001) by plasma-assisted molecular-beam epitaxy

@article{ author = { T. Ive and O. Brandt and M. Ramsteiner and M. Giehler and H. Kostial and K. H. Ploog }, title = { Properties of InN layers grown on 6H-SiC(0001) by plasma-assisted molecular-beam epitaxy }, journal = { Applied Physics Letters }, volume = { 84 }, year = { 2004 }, pages = { 1671 } }

TY - JOUR AU - T. Ive AU - O. Brandt AU - M. Ramsteiner AU - M. Giehler AU - H. Kostial AU - K. H. Ploog TI - Properties of InN layers grown on 6H-SiC(0001) by plasma-assisted molecular-beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 84 SP - 1671 PY - 2004/01/01

Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

@article{ author = { M. Ramsteiner and D. S. Jiang and J. S. Harris and K. H. Ploog }, title = { Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy }, journal = { Applied Physics Letters }, volume = { 84 }, year = { 2004 }, pages = { 1859 } }

TY - JOUR AU - M. Ramsteiner AU - D. S. Jiang AU - J. S. Harris AU - K. H. Ploog TI - Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 84 SP - 1859 PY - 2004/01/01

Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs

@article{ author = { O. Onomitsu and T. Okabe and T. Makimoto and H. Saito and M. Ramsteiner and H.-J. Zhu and A. Kawaharazuka and K. Ploog and Y. Horikoshi }, title = { Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs }, journal = { Japanese Journal of Applied Physics, Part 2 }, volume = { 43 }, year = { 2004 }, pages = { L756 } }

TY - JOUR AU - O. Onomitsu AU - T. Okabe AU - T. Makimoto AU - H. Saito AU - M. Ramsteiner AU - H.-J. Zhu AU - A. Kawaharazuka AU - K. Ploog AU - Y. Horikoshi TI - Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs JF - Japanese Journal of Applied Physics, Part 2 JA - Jpn. J. Appl. Phys., Part 2 J1 - JJAP2 VL - 43 SP - L756 PY - 2004/01/01

Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001)

@article{ author = { T. Ive and O. Brandt and H. Kostial and T. Hesjedal and M. Ramsteiner and K. H. Ploog }, title = { Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001) }, journal = { Applied Physics Letters }, volume = { 85 }, year = { 2004 }, pages = { 1970 } }

TY - JOUR AU - T. Ive AU - O. Brandt AU - H. Kostial AU - T. Hesjedal AU - M. Ramsteiner AU - K. H. Ploog TI - Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 85 SP - 1970 PY - 2004/01/01

Spin Injection from Fe₃Si into GaAs

@article{ author = { A. Kawaharazuka and M. Ramsteiner and J. Herfort and H.-P. Schönherr and H. Kostial and K. H. Ploog }, title = { Spin Injection from Fe₃Si into GaAs }, journal = { Applied Physics Letters }, volume = { 85 }, year = { 2004 }, pages = { 3492 } }

TY - JOUR AU - A. Kawaharazuka AU - M. Ramsteiner AU - J. Herfort AU - H.-P. Schönherr AU - H. Kostial AU - K. H. Ploog TI - Spin Injection from Fe₃Si into GaAs JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 85 SP - 3492 PY - 2004/01/01

Nitrogen-dependent optimum annealing temperature of Ga(As,N)

@article{ author = { G. Mussler and J.-M. Chauveau and A. Trampert and M. Ramsteiner and L. Däweritz and K. H. Ploog }, title = { Nitrogen-dependent optimum annealing temperature of Ga(As,N) }, journal = { Journal of Crystal Growth }, volume = { 267 }, year = { 2004 }, pages = { 60 } }

TY - JOUR AU - G. Mussler AU - J.-M. Chauveau AU - A. Trampert AU - M. Ramsteiner AU - L. Däweritz AU - K. H. Ploog TI - Nitrogen-dependent optimum annealing temperature of Ga(As,N) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 267 SP - 60 PY - 2004/01/01