Dr. Manfred Ramsteiner

Optical characterization of single misfit dislocations and their interaction with point defects in thin ZnSe films

@article{ author = { U. Hilpert and L. Worschech and L. Höring and M. Ramsteiner and B. König and J. Schreiber and W. Ossau and G. Landwehr }, title = { Optical characterization of single misfit dislocations and their interaction with point defects in thin ZnSe films }, journal = { Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) }, volume = { }, year = { 2001 }, pages = { 1545 } }

TY - JOUR AU - U. Hilpert AU - L. Worschech AU - L. Höring AU - M. Ramsteiner AU - B. König AU - J. Schreiber AU - W. Ossau AU - G. Landwehr TI - Optical characterization of single misfit dislocations and their interaction with point defects in thin ZnSe films JF - Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) JA - Proc. ICPS 25 J1 - VL - SP - 1545 PY - 2001/01/01

Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

@article{ author = { W. Ma and R. Nötzel and A. Trampert and M. Ramsteiner and H. Zhu and H.-P. Schönherr and K. H. Ploog }, title = { Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100) }, journal = { Applied Physics Letters }, volume = { 78 }, year = { 2001 }, pages = { 1297 } }

TY - JOUR AU - W. Ma AU - R. Nötzel AU - A. Trampert AU - M. Ramsteiner AU - H. Zhu AU - H.-P. Schönherr AU - K. H. Ploog TI - Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 78 SP - 1297 PY - 2001/01/01

Patterning of epitaxial MnAs on GaAs by direct optical writing

@article{ author = { M. Ramsteiner and H. J. Zhu and L. Däweritz }, title = { Patterning of epitaxial MnAs on GaAs by direct optical writing }, journal = { Applied Physics Letters }, volume = { 79 }, year = { 2001 }, pages = { 2411 } }

TY - JOUR AU - M. Ramsteiner AU - H. J. Zhu AU - L. Däweritz TI - Patterning of epitaxial MnAs on GaAs by direct optical writing JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 79 SP - 2411 PY - 2001/01/01

Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells

@article{ author = { B. Rau and J. Puls and F. Henneberger and P. Waltereit and O. Brandt and M. Ramsteiner and K. H. Ploog }, title = { Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells }, journal = { Proceedings of the Society for Optical Engineering }, volume = { 4283 }, year = { 2001 }, pages = { 96 } }

TY - JOUR AU - B. Rau AU - J. Puls AU - F. Henneberger AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - K. H. Ploog TI - Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells JF - Proceedings of the Society for Optical Engineering JA - Proc. SPIE Int. Soc. Opt. Eng. J1 - SPIE VL - 4283 SP - 96 PY - 2001/01/01

M-plane GaN(1|100) grown on γ-LiAlO₂(100): nitride semiconductors free of internal electrostatic fields

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and A. Trampert and H.T. Grahn and J. Menniger and M. Reiche and K. H. Ploog }, title = { M-plane GaN(1|100) grown on <span class="math"><em>γ</em></span>-LiAlO₂(100): nitride semiconductors free of internal electrostatic fields }, journal = { Journal of Crystal Growth }, volume = { 227/228 }, year = { 2001 }, pages = { 437 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - A. Trampert AU - H.T. Grahn AU - J. Menniger AU - M. Reiche AU - K. H. Ploog TI - M-plane GaN(1|100) grown on <span class="math"><em>γ</em></span>-LiAlO₂(100): nitride semiconductors free of internal electrostatic fields JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 227/228 SP - 437 PY - 2001/01/01

Room-temperature spin injection from Fe into GaAs

@article{ author = { H. J. Zhu and M. Ramsteiner and H. Kostial and M. Wassermeier and H.-P. Schönherr and K. H. Ploog }, title = { Room-temperature spin injection from Fe into GaAs }, journal = { Physical Review Letters }, volume = { 87 }, year = { 2001 }, pages = { 016601 } }

TY - JOUR AU - H. J. Zhu AU - M. Ramsteiner AU - H. Kostial AU - M. Wassermeier AU - H.-P. Schönherr AU - K. H. Ploog TI - Room-temperature spin injection from Fe into GaAs JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 87 SP - 016601 PY - 2001/01/01

Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films

@article{ author = { U. Hilpert and J. Schreiber and L. Worschech and L. Höring and M. Ramsteiner and W. Ossau and G. Landwehr }, title = { Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films }, journal = { Journal of Physics: Condensed Matter }, volume = { 12 }, year = { 2000 }, pages = { 10169 } }

TY - JOUR AU - U. Hilpert AU - J. Schreiber AU - L. Worschech AU - L. Höring AU - M. Ramsteiner AU - W. Ossau AU - G. Landwehr TI - Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 12 SP - 10169 PY - 2000/01/01

Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition

@article{ author = { S. R. Jin and M. Ramsteiner and H.T. Grahn and K. H. Ploog and Z. Q. Zhu and D. X. Shen and A. Z. Li and P. Metev and L. J. Guido }, title = { Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition }, journal = { Journal of Crystal Growth }, volume = { 212 }, year = { 2000 }, pages = { 56 } }

TY - JOUR AU - S. R. Jin AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog AU - Z. Q. Zhu AU - D. X. Shen AU - A. Z. Li AU - P. Metev AU - L. J. Guido TI - Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 212 SP - 56 PY - 2000/01/01

Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures

@article{ author = { S. R. Jin and M. Ramsteiner and H.T. Grahn and K. H. Ploog and Z. H. Li and D. X. Shen and Z. Q. Zhu }, title = { Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures }, journal = { Journal of Applied Physics }, volume = { 88 }, year = { 2000 }, pages = { 4075 } }

TY - JOUR AU - S. R. Jin AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog AU - Z. H. Li AU - D. X. Shen AU - Z. Q. Zhu TI - Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 88 SP - 4075 PY - 2000/01/01

Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures

@article{ author = { R. Nötzel and J. Fricke and U. Jahn and M. Ramsteiner and H.-P. Schönherr and K. H. Ploog }, title = { Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 183 } }

TY - JOUR AU - R. Nötzel AU - J. Fricke AU - U. Jahn AU - M. Ramsteiner AU - H.-P. Schönherr AU - K. H. Ploog TI - Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 183 PY - 2000/01/01