PDI -> Staff ->

Dr. Oliver Brandt

Senior Scientist

Core Research Area Coordinator

phone: +49 30 20377 332

room: 0535

email: brandt@pdi-berlin.de

 

Department: Semiconductor Spectroscopy

Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics

 

 

61 Author V. M. Kaganer , B. Jenichen , M. Ramsteiner , U. Jahn , C. Hauswald , F. Grosse , S. Fernández-Garrido , O. Brandt
Title

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

Source J. Phys. D: Appl. Phys. , 48 , 385105 ( 2015 )
DOI : 10.1088/0022-3727/48/38/385105 | 2709 Cite : Bibtex RIS
V. M. Kaganer, B. Jenichen, M. Ramsteiner, U. Jahn, C. Hauswald, F. Grosse, S. Fernández-Garrido, and O. Brandt

62 Author C. Gao , C. Dong , C. Jia , D. Xue , J. Herfort , O. Brandt
Title

In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe

Source Phys. Rev. B , 92 , 094404 ( 2015 )
DOI : 10.1103/PhysRevB.92.094404 | Download: PDF | 2680 Cite : Bibtex RIS
C. Gao, C. Dong, C. Jia, D. Xue, J. Herfort, and O. Brandt

63 Author J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Title

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

Source Cryst. Growth Des. , 15 , 4104 ( 2015 )
DOI : 10.1021/acs.cgd.5b00690 | 2697 Cite : Bibtex RIS
J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

64 Author O. Marquardt , L. Geelhaar , O. Brandt
Title

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

Source Nano Lett. , 15 , 4289 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00101 | 2678 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

65 Author O. Marquardt , L. Geelhaar , O. Brandt
Title

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

Source J. Comput. Electron. , 14 , 464 ( 2015 )
DOI : 10.1007/s10825-015-0669-1 | 2679 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

66 Author M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert
Title

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

Source Nano Lett. , 15 , 3743 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00251 | 2698 Cite : Bibtex RIS
M. Wölz, C. Hauswald, T. Flissikowski, T. Gotschke, S. Fernández-Garrido, O. Brandt, H. T. Grahn, L. Geelhaar, and H. Riechert

67 Author P. Corfdir , F. Feix , J. K. Zettler , S. Fernández-Garrido , O. Brandt
Title

Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires

Source New J. Phys. , 17 , 033040 ( 2015 )
DOI : 10.1088/1367-2630/17/3/033040 | Download: PDF | 2664 Cite : Bibtex RIS
P. Corfdir, F. Feix, J. K. Zettler, S. Fernández-Garrido, and O. Brandt

68 Author S. Schulz , O. Marquardt , C. Coughlan , M. A. Caro , L. Geelhaar , O. Brandt , E. P. O'Reilly
Title

Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells

Source Proc. SPIE , 9357 , ( 2015 )
DOI : 10.1117/12.2084800 | Download: PDF | 2721 Cite : Bibtex RIS
S. Schulz, O. Marquardt, C. Coughlan, M. A. Caro, L. Geelhaar, O. Brandt, and E. P. O'Reilly

69 Author S. Fernández-Garrido , J. K. Zettler , L. Geelhaar , O. Brandt
Title

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Source Nano Lett. , 15 , 1930 ( 2015 )
DOI : 10.1021/nl504778s | 2684 Cite : Bibtex RIS
S. Fernández-Garrido, J. K. Zettler, L. Geelhaar, and O. Brandt

70 Author M. Musolino , A. Tahraoui , S. Fernández-Garrido , O. Brandt , A. Trampert , L. Geelhaar , H. Riechert
Title

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Source Nanotechnology , 26 , 085605 ( 2015 )
DOI : 10.1088/0957-4484/26/8/085605 | Download arXiv: 1410.7546 | 2564 Cite : Bibtex RIS
M. Musolino, A. Tahraoui, S. Fernández-Garrido, O. Brandt, A. Trampert, L. Geelhaar, and H. Riechert