Head of Department Microstructure
phone: +49 30 20377 280
room: 0615
email: trampert@pdi-berlin.de
Department: Microstructure
Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics
11 | Author | R. B. Lewis , A. Trampert , E. Luna , J. Herranz , C. Pfüller , L. Geelhaar |
Title |
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots |
|
Source | Semicond. Sci. Technol. , 34 , 105016 ( 2019 ) | |
DOI : 10.1088/1361-6641/ab3c23 | Download arXiv: 1905.05303 | Cite : Bibtex RIS |
12 | Author | E. Luna , M. Wu , T. Aoki , M.R. McCartney , J. Puustinen , J. Hilska , M. Guina , D. J. Smith , A. Trampert |
Title |
Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers |
|
Source | J. Appl. Phys. , 126 , 085305 ( 2019 ) | |
DOI : 10.1063/1.5111532 | Download: PDF | Cite : Bibtex RIS |
13 | Author | A. Fernando-Saavedra , S. Albert , A. Bengoechea-Encabo , D. Lopez-Romero , M. Niehle , S. Metzner , G. Schmidt , F. Bertram , M.A. Sanchez-Garcia , A. Trampert , J. Christen , E. Calleja |
Title |
Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width |
|
Source | J. Cryst. Growth , 525 , 125189 ( 2019 ) | |
DOI : 10.1016/j.jcrysgro.2019.125189 | Cite : Bibtex RIS |
14 | Author | Y. Takagaki , M. Ramsteiner , U. Jahn , B. Jenichen , A. Trampert |
Title |
Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions |
|
Source | J. Phys. D: Appl. Phys. , 52 , 385101 ( 2019 ) | |
DOI : 10.1088/1361-6463/ab2cbb | Cite : Bibtex RIS |
15 | Author | L. Nicolai , Ž. Gačević , E. Calleja , A. Trampert |
Title |
Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires |
|
Source | Nanoscale Res. Lett. , 14 , 232 ( 2019 ) | |
DOI : 10.1186/s11671-019-3072-1 | Download: PDF | Cite : Bibtex RIS |
16 | Author | O. Delorme , L. Cerutti , R. Kudrawiec , E. Luna , J. Kopaczek , M. Gladysiewicz , A. Trampert , E. Tournie , J.-B. Rodriguez |
Title |
GaSbBi Alloys and Heterostructures: Fabrication and Properties |
|
Source | Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu , 285 , 125 ( 2019 ) | |
DOI : 10.1007/978-981-13-8078-5_6 | Cite : Bibtex RIS |
17 | Author | G. Calabrese , G. Gao , D. van Treeck , P. Corfdir , C. Sinito , T. Auzelle , A. Trampert , L. Geelhaar , O. Brandt , S. Fernández-Garrido |
Title |
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 |
|
Source | Nanotechnology , 30 , 114001 ( 2019 ) | |
DOI : 10.1088/1361-6528/aaf9c5 | Cite : Bibtex RIS |
18 | Author | P. Corfdir , O. Marquardt , R. B. Lewis , C. Sinito , M. Ramsteiner , A. Trampert , U. Jahn , L. Geelhaar , O. Brandt , V. M. Fomin |
Title |
Excitonic Aharonov-Bohm oscillations in core-shell nanowires |
|
Source | Adv. Mater. , 31 , 1805645 ( 2019 ) | |
DOI : 10.1002/adma.201805645 | Cite : Bibtex RIS |
19 | Author | J. Hartmann , I. Manglano Clavero , L. Nicolai , C. Margenfeld , H. Spende , J. Ledig , H. Zhou , F. Steib , A. Jaros , A. Avramescu , M. Strassburg , A. Trampert , H.-H. Wehmann , H.-J. Lugauer , T. Voss , A. Waag |
Title |
3D GaN Fins as a Versatile Platform for a-Plane-Based Devices |
|
Source | Phys. Status Solidi B , 256 , 1800477 ( 2019 ) | |
DOI : 10.1002/pssb.201800477 | Cite : Bibtex RIS |
20 | Author | Z. Cheng , M. Hanke , Z. Galazka , A. Trampert |
Title |
Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction |
|
Source | Appl. Phys. Lett. , 113 , 182102 ( 2018 ) | |
DOI : 10.1063/1.5054265 | Download: PDF | Cite : Bibtex RIS |