Dr. Achim Trampert

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

@article{ author = { R. B. Lewis and A. Trampert and E. Luna and J. Herranz and C. Pfüller and L. Geelhaar }, title = { Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 105016 } }

TY - JOUR AU - R. B. Lewis AU - A. Trampert AU - E. Luna AU - J. Herranz AU - C. Pfüller AU - L. Geelhaar TI - Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 105016 PY - 2019/09/16

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

@article{ author = { E. Luna and M. Wu and T. Aoki and M.R. McCartney and J. Puustinen and J. Hilska and M. Guina and D. J. Smith and A. Trampert }, title = { Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers }, journal = { Journal of Applied Physics }, volume = { 126 }, year = { 2019 }, pages = { 085305 } }

TY - JOUR AU - E. Luna AU - M. Wu AU - T. Aoki AU - M.R. McCartney AU - J. Puustinen AU - J. Hilska AU - M. Guina AU - D. J. Smith AU - A. Trampert TI - Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 126 SP - 085305 PY - 2019/08/26

Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width

@article{ author = { A. Fernando-Saavedra and S. Albert and A. Bengoechea-Encabo and D. Lopez-Romero and M. Niehle and S. Metzner and G. Schmidt and F. Bertram and M.A. Sanchez-Garcia and A. Trampert and J. Christen and E. Calleja }, title = { Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width }, journal = { Journal of Crystal Growth }, volume = { 525 }, year = { 2019 }, pages = { 125189 } }

TY - JOUR AU - A. Fernando-Saavedra AU - S. Albert AU - A. Bengoechea-Encabo AU - D. Lopez-Romero AU - M. Niehle AU - S. Metzner AU - G. Schmidt AU - F. Bertram AU - M.A. Sanchez-Garcia AU - A. Trampert AU - J. Christen AU - E. Calleja TI - Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 525 SP - 125189 PY - 2019/08/08

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen and A. Trampert }, title = { Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 385101 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen AU - A. Trampert TI - Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 52 SP - 385101 PY - 2019/07/15

Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires

@article{ author = { L. Nicolai and Ž. Gačević and E. Calleja and A. Trampert }, title = { Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires }, journal = { Nanoscale Research Letters }, volume = { 14 }, year = { 2019 }, pages = { 232 } }

TY - JOUR AU - L. Nicolai AU - Ž. Gačević AU - E. Calleja AU - A. Trampert TI - Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 14 SP - 232 PY - 2019/07/12

GaSbBi Alloys and Heterostructures: Fabrication and Properties

@article{ author = { O. Delorme and L. Cerutti and R. Kudrawiec and E. Luna and J. Kopaczek and M. Gladysiewicz and A. Trampert and E. Tournie and J.-B. Rodriguez }, title = { GaSbBi Alloys and Heterostructures: Fabrication and Properties }, journal = { Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu }, volume = { 285 }, year = { 2019 }, pages = { 125 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - R. Kudrawiec AU - E. Luna AU - J. Kopaczek AU - M. Gladysiewicz AU - A. Trampert AU - E. Tournie AU - J.-B. Rodriguez TI - GaSbBi Alloys and Heterostructures: Fabrication and Properties JF - Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu JA - J1 - VL - 285 SP - 125 PY - 2019/07/03

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. van Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. van Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25

Excitonic Aharonov-Bohm oscillations in core-shell nanowires

@article{ author = { P. Corfdir and O. Marquardt and R. B. Lewis and C. Sinito and M. Ramsteiner and A. Trampert and U. Jahn and L. Geelhaar and O. Brandt and V. M. Fomin }, title = { Excitonic Aharonov-Bohm oscillations in core-shell nanowires }, journal = { Advanced Materials }, volume = { 31 }, year = { 2019 }, pages = { 1805645 } }

TY - JOUR AU - P. Corfdir AU - O. Marquardt AU - R. B. Lewis AU - C. Sinito AU - M. Ramsteiner AU - A. Trampert AU - U. Jahn AU - L. Geelhaar AU - O. Brandt AU - V. M. Fomin TI - Excitonic Aharonov-Bohm oscillations in core-shell nanowires JF - Advanced Materials JA - Adv. Mater. J1 - VL - 31 SP - 1805645 PY - 2019/01/15

3D GaN Fins as a Versatile Platform for a-Plane-Based Devices

@article{ author = { J. Hartmann and I. Manglano Clavero and L. Nicolai and C. Margenfeld and H. Spende and J. Ledig and H. Zhou and F. Steib and A. Jaros and A. Avramescu and M. Strassburg and A. Trampert and H.-H. Wehmann and H.-J. Lugauer and T. Voss and A. Waag }, title = { 3D GaN Fins as a Versatile Platform for a-Plane-Based Devices }, journal = { Physica Status Solidi B }, volume = { 256 }, year = { 2019 }, pages = { 1800477 } }

TY - JOUR AU - J. Hartmann AU - I. Manglano Clavero AU - L. Nicolai AU - C. Margenfeld AU - H. Spende AU - J. Ledig AU - H. Zhou AU - F. Steib AU - A. Jaros AU - A. Avramescu AU - M. Strassburg AU - A. Trampert AU - H.-H. Wehmann AU - H.-J. Lugauer AU - T. Voss AU - A. Waag TI - 3D GaN Fins as a Versatile Platform for a-Plane-Based Devices JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 256 SP - 1800477 PY - 2019/01/07

Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and Z. Galazka and A. Trampert }, title = { Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 182102 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - Z. Galazka AU - A. Trampert TI - Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 182102 PY - 2018/10/31