PDI -> Staff ->

Dr. Achim Trampert

Head of Department Microstructure

Achim Trampert

phone: +49 30 20377 280

room: 0615

email: trampert@pdi-berlin.de

 

Department: Microstructure

Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics

 

 

341 Author O. Brandt , H. Yang , A. Trampert , M. Wassermeier , K. H. Ploog
Title

Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy

Source Appl. Phys. Lett. , 71 , 473 ( 1997 )
1094 Cite : Bibtex RIS
O. Brandt, H. Yang, A. Trampert, M. Wassermeier, and K. H. Ploog

342 Author W. Braun , A. Trampert , L. Däweritz , K. H. Ploog
Title

Nonuniform segregation of Ga at AlAs/GaAs heterointerfaces

Source Phys. Rev. B , 55 , 1689 ( 1997 )
Download: PDF | 1096 Cite : Bibtex RIS
W. Braun, A. Trampert, L. Däweritz, and K. H. Ploog

343 Author W. Braun , A. Trampert , L. Däweritz , K. H. Ploog
Title

Laterally nonuniform Ga segregation at GaAs/AlGaAs interfaces during MBE growth

Source J. Cryst. Growth , 175/176 , 156 ( 1997 )
1097 Cite : Bibtex RIS
W. Braun, A. Trampert, L. Däweritz, and K. H. Ploog

344 Author T. Eisenhammer , A. Trampert
Title

Formation of quasicrystalline AlCuFe by physical deposition: Phase selection via nanocluster nucleation

Source Phys. Rev. Lett. , 78 , 262 ( 1997 )
1110 Cite : Bibtex RIS
T. Eisenhammer, and A. Trampert

345 Author R. Nötzel , J. Menniger , M. Ramsteiner , A. Trampert , H.-P. Schönherr , L. Däweritz , K. H. Ploog
Title

Patterned growth on GaAs(311)A substrates

Source J. Cryst. Growth , 175/176 , 1114 ( 1997 )
1169 Cite : Bibtex RIS
R. Nötzel, J. Menniger, M. Ramsteiner, A. Trampert, H.-P. Schönherr, L. Däweritz, and K. H. Ploog

346 Author K. H. Ploog , O. Brandt , H. Yang , A. Trampert
Title

MBE growth and characteristics of cubic GaN

Source Thin Solid Films , 306 , 231 ( 1997 )
1177 Cite : Bibtex RIS
K. H. Ploog, O. Brandt, H. Yang, and A. Trampert

347 Author A. Trampert , O. Brandt , K. Ploog
Title

Phase transformations and phase stability in epitaxial β-GaN films

Source Angew. Chem. Int. Ed. Engl. , 36 , 2111 ( 1997 )
1197 Cite : Bibtex RIS
A. Trampert, O. Brandt, and K. Ploog

348 Author A. Trampert , O. Brandt , H. Yang , K. H. Ploog
Title

Direct observation of the initial nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs

Source Appl. Phys. Lett. , 70 , 583 ( 1997 )
1198 Cite : Bibtex RIS
A. Trampert, O. Brandt, H. Yang, and K. H. Ploog

349 Author A. Trampert , O. Brandt , H. Yang , K. Ploog
Title

Heteroepitaxy of cubic GaN

Source J. Phys. III (France) , 7 , 2309 ( 1997 )
1199 Cite : Bibtex RIS
A. Trampert, O. Brandt, H. Yang, and K. Ploog

350 Author A. Trampert , O. Brandt , H. Yang , B. Yang , K. H. Ploog
Title

Heteroepitaxy of cubic GaN: influence of interface structure

Source Proc. ICMSM 10 , 157 , 205 ( 1997 )
1200 Cite : Bibtex RIS
A. Trampert, O. Brandt, H. Yang, B. Yang, and K. H. Ploog