Dr. Achim Trampert

Growth of cubic GaN on (001)GaAs

@article{ author = { O. Brandt and H. Yang and A. Trampert and K. H. Ploog }, title = { Growth of cubic GaN on (001)GaAs }, journal = { Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 27 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - A. Trampert AU - K. H. Ploog TI - Growth of cubic GaN on (001)GaAs JF - Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) JA - Proc. MRS 395 J1 - - VL - SP - 27 PY - 1996/01/01

Strong alignment of self-assembling InP quantum dots

@article{ author = { K. Häusler and E. Eberl and F. Noll and A. Trampert }, title = { Strong alignment of self-assembling InP quantum dots }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 4913 } }

TY - JOUR AU - K. Häusler AU - E. Eberl AU - F. Noll AU - A. Trampert TI - Strong alignment of self-assembling InP quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 4913 PY - 1996/01/01

Does the 1.25 eV luminescence of coherently strained InGaAs insertions in GaAs originate from quantum dots?

@article{ author = { J.-L. Lazzari and R. Klann and A. Mazuelas and A. Trampert and M. Wassermeier and O. Brandt and K. H. Ploog }, title = { Does the 1.25 eV luminescence of coherently strained InGaAs insertions in GaAs originate from quantum dots? }, journal = { Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures; edited by E. D. Jones, A. Mascarenhas, and P. Petroff, Mater. Res. Soc. Proc. Vol. 417 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 199 } }

TY - JOUR AU - J.-L. Lazzari AU - R. Klann AU - A. Mazuelas AU - A. Trampert AU - M. Wassermeier AU - O. Brandt AU - K. H. Ploog TI - Does the 1.25 eV luminescence of coherently strained InGaAs insertions in GaAs originate from quantum dots? JF - Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures; edited by E. D. Jones, A. Mascarenhas, and P. Petroff, Mater. Res. Soc. Proc. Vol. 417 (MRS, Pittsburgh, 1996) JA - Proc. MRS 417 J1 - - VL - SP - 199 PY - 1996/01/01

Strain status and morphology of (In,Ga)As/GaAs ’quantum dot’-like structures

@article{ author = { A. Mazuelas and J.-L. Lazzari and M. Wassermeier and A. Trampert and R. Klann and O. Brandt and K. H. Ploog }, title = { Strain status and morphology of (In,Ga)As/GaAs ’quantum dot’-like structures }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1333 } }

TY - JOUR AU - A. Mazuelas AU - J.-L. Lazzari AU - M. Wassermeier AU - A. Trampert AU - R. Klann AU - O. Brandt AU - K. H. Ploog TI - Strain status and morphology of (In,Ga)As/GaAs ’quantum dot’-like structures JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1333 PY - 1996/01/01

Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy }, journal = { Japanese Journal of Applied Physics, Part 2 }, volume = { 35 }, year = { 1996 }, pages = { L297 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy JF - Japanese Journal of Applied Physics, Part 2 JA - Jpn. J. Appl. Phys., Part 2 J1 - JJAP2 VL - 35 SP - L297 PY - 1996/01/01

Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires }, journal = { Journal of Applied Physics }, volume = { 80 }, year = { 1996 }, pages = { 4108 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 80 SP - 4108 PY - 1996/01/01

Interplay between growth mode and plastic relaxation of highly-mismatched InAs layers grown on (100) GaAs substrates by molecular-beam epitaxy

@article{ author = { E. Tournie and A. Trampert and K. H. Ploog }, title = { Interplay between growth mode and plastic relaxation of highly-mismatched InAs layers grown on (100) GaAs substrates by molecular-beam epitaxy }, journal = { Proceedings of the International Conference on Semiconductor Heteroepitaxy; edited by B. Gil and R.-L. Aulomnard (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 590 } }

TY - JOUR AU - E. Tournie AU - A. Trampert AU - K. H. Ploog TI - Interplay between growth mode and plastic relaxation of highly-mismatched InAs layers grown on (100) GaAs substrates by molecular-beam epitaxy JF - Proceedings of the International Conference on Semiconductor Heteroepitaxy; edited by B. Gil and R.-L. Aulomnard (World Scientific, Singapore, 1996) JA - Proc. ICSH J1 - - VL - SP - 590 PY - 1996/01/01

Interfacial defect control of highly mismatched (100)InAs/GaAs heterostructures grown by MBE

@article{ author = { A. Trampert and E. Tournie and K. H. Ploog }, title = { Interfacial defect control of highly mismatched (100)InAs/GaAs heterostructures grown by MBE }, journal = { Proceedings of the 9th International Conference on Microscopy of Semiconducting Materials; edited by A. G. Cullis and A. E. Stanton-Bevan, IOP Conf. Ser. }, volume = { 146 }, year = { 1996 }, pages = { 203 } }

TY - JOUR AU - A. Trampert AU - E. Tournie AU - K. H. Ploog TI - Interfacial defect control of highly mismatched (100)InAs/GaAs heterostructures grown by MBE JF - Proceedings of the 9th International Conference on Microscopy of Semiconducting Materials; edited by A. G. Cullis and A. E. Stanton-Bevan, IOP Conf. Ser. JA - Proc. ICMSM 9 J1 - - VL - 146 SP - 203 PY - 1996/01/01

Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

@article{ author = { H. Yang and O. Brandt and A. Trampert and K. H. Ploog }, title = { Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy }, journal = { Applied Surface Science }, volume = { 104/105 }, year = { 1996 }, pages = { 461 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - A. Trampert AU - K. H. Ploog TI - Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 104/105 SP - 461 PY - 1996/01/01