Dr. Achim Trampert

Application of electron tomography for comprehensive determination of III-V interface properties

@article{ author = { L. Nicolai and K. Biermann and A. Trampert }, title = { Application of electron tomography for comprehensive determination of III-V interface properties }, journal = { Ultramicroscopy }, volume = { 224 }, year = { 2021 }, pages = { 113261 } }

TY - JOUR AU - L. Nicolai AU - K. Biermann AU - A. Trampert TI - Application of electron tomography for comprehensive determination of III-V interface properties JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 224 SP - 113261 PY - 2021/03/16

In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2

@article{ author = { M. Terker and L. Nicolai and S. Gaucher and J. Herfort and A. Trampert }, title = { In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2 }, journal = { Journal of Physical Chemistry C }, volume = { 125 }, year = { 2021 }, pages = { 2779 } }

TY - JOUR AU - M. Terker AU - L. Nicolai AU - S. Gaucher AU - J. Herfort AU - A. Trampert TI - In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2 JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 125 SP - 2779 PY - 2021/01/25

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and A. Trampert }, title = { Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys }, journal = { Journal of Alloys and Compounds }, volume = { 824 }, year = { 2020 }, pages = { 153880 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - A. Trampert TI - Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 824 SP - 153880 PY - 2020/01/24

Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction

@article{ author = { Y. He and P. Tang and Z. Hu and Q. He and C. Zhu and L. Wang and Q. Zeng and P. Golani and G. Gao and W. Fu and Z. Huang and C. Gao and J. Xia and Xi. Wang and Xu. Wang and Q. M. Ramasse and A. Zhang and B. An and Y. Zhang and S. Martí-Sánchez and J. R. Morante and B. K. Tay and B. I. Yakobson and A. Trampert and H. Zhang and M. Wu and Q. J. Wang and J. Arbiol and Z. Liu }, title = { Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction }, journal = { Nature Communications }, volume = { 11 }, year = { 2020 }, pages = { 57 } }

TY - JOUR AU - Y. He AU - P. Tang AU - Z. Hu AU - Q. He AU - C. Zhu AU - L. Wang AU - Q. Zeng AU - P. Golani AU - G. Gao AU - W. Fu AU - Z. Huang AU - C. Gao AU - J. Xia AU - Xi. Wang AU - Xu. Wang AU - Q. M. Ramasse AU - A. Zhang AU - B. An AU - Y. Zhang AU - S. Martí-Sánchez AU - J. R. Morante AU - B. K. Tay AU - B. I. Yakobson AU - A. Trampert AU - H. Zhang AU - M. Wu AU - Q. J. Wang AU - J. Arbiol AU - Z. Liu TI - Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction JF - Nature Communications JA - Nat. Commun. J1 - VL - 11 SP - 57 PY - 2020/01/02

Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb

@article{ author = { E. Luna and A. Trampert and J.Lu and T. Aoki and Y.-H. Zhang and M. R. McCartney and D. J. Smith }, title = { Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb }, journal = { Advanced Materials Interfaces }, volume = { 7 }, year = { 2020 }, pages = { 1901658 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - J.Lu AU - T. Aoki AU - Y.-H. Zhang AU - M. R. McCartney AU - D. J. Smith TI - Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb JF - Advanced Materials Interfaces JA - J1 - VL - 7 SP - 1901658 PY - 2020/01/01

In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

@article{ author = { M. Terker and B. Jenichen and J. Herfort and A. Trampert }, title = { In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 124004 } }

TY - JOUR AU - M. Terker AU - B. Jenichen AU - J. Herfort AU - A. Trampert TI - In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 124004 PY - 2019/11/15

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate

@article{ author = { B. Jenichen and Z. Cheng and M. Hanke and J. Herfort and A. Trampert }, title = { Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 124002 } }

TY - JOUR AU - B. Jenichen AU - Z. Cheng AU - M. Hanke AU - J. Herfort AU - A. Trampert TI - Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 124002 PY - 2019/10/29

Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission

@article{ author = { M. García-Tecedor and J. Bartolomé and D. Maestre and A. Trampert and A. Cremades }, title = { Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission }, journal = { Nano Research }, volume = { 12 }, year = { 2019 }, pages = { 441 } }

TY - JOUR AU - M. García-Tecedor AU - J. Bartolomé AU - D. Maestre AU - A. Trampert AU - A. Cremades TI - Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission JF - Nano Research JA - Nano Res. J1 - VL - 12 SP - 441 PY - 2019/10/26