Dr. Timur Flissikowski

Rate-equation model of spin dynamics and polarized light emission for spin light-emitting diodes

@article{ author = { O. Brandt and M. Ramsteiner and T. Flissikowski and J. Herfort and H.T. Grahn }, title = { Rate-equation model of spin dynamics and polarized light emission for spin light-emitting diodes }, journal = { Physical Review B: Solid State }, volume = { 81 }, year = { 2010 }, pages = { 115302 } }

TY - JOUR AU - O. Brandt AU - M. Ramsteiner AU - T. Flissikowski AU - J. Herfort AU - H.T. Grahn TI - Rate-equation model of spin dynamics and polarized light emission for spin light-emitting diodes JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 81 SP - 115302 PY - 2010/01/01

Unpinning the Fermi level in GaN nanowires by ultraviolet radiation

@article{ author = { C. Pfüller and O. Brandt and F. Grosse and T. Flissikowski and C. Chèze and V. Consonni and L. Geelhaar and H.T. Grahn and H. Riechert }, title = { Unpinning the Fermi level in GaN nanowires by ultraviolet radiation }, journal = { Physical Review B: Solid State }, volume = { 82 }, year = { 2010 }, pages = { 045320 } }

TY - JOUR AU - C. Pfüller AU - O. Brandt AU - F. Grosse AU - T. Flissikowski AU - C. Chèze AU - V. Consonni AU - L. Geelhaar AU - H.T. Grahn AU - H. Riechert TI - Unpinning the Fermi level in GaN nanowires by ultraviolet radiation JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 82 SP - 045320 PY - 2010/01/01

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the Poissonian limit

@article{ author = { C. Pfüller and O. Brandt and T. Flissikowski and C. Chèze and L. Geelhaar and H.T. Grahn and H. Riechert }, title = { Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the Poissonian limit }, journal = { Nano Research }, volume = { 3 }, year = { 2010 }, pages = { 881 } }

TY - JOUR AU - C. Pfüller AU - O. Brandt AU - T. Flissikowski AU - C. Chèze AU - L. Geelhaar AU - H.T. Grahn AU - H. Riechert TI - Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the Poissonian limit JF - Nano Research JA - Nano Res. J1 - VL - 3 SP - 881 PY - 2010/01/01

Epitaxy of Ge-Sb-Te phase-change memory alloys

@article{ author = { W. Braun and R. Shayduk and T. Flissikowski and M. Ramsteiner and H.T. Grahn and H. Riechert and P. Fons and A. Kolobov }, title = { Epitaxy of Ge-Sb-Te phase-change memory alloys }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 041902 } }

TY - JOUR AU - W. Braun AU - R. Shayduk AU - T. Flissikowski AU - M. Ramsteiner AU - H.T. Grahn AU - H. Riechert AU - P. Fons AU - A. Kolobov TI - Epitaxy of Ge-Sb-Te phase-change memory alloys JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 041902 PY - 2009/01/01

Epitaxial phase change materials: Growth and switching of Ge₂Sb₂Te₅ on GaSb(001)

@article{ author = { W. Braun and R. Shayduk and T. Flissikowski and H.T. Grahn and H. Riechert and P. Fons and A. Kolobov }, title = { Epitaxial phase change materials: Growth and switching of Ge₂Sb₂Te₅ on GaSb(001) }, journal = { Materials and Physics for Nonvolatile Memories; edited by Y. Fujisaki, R. Waser, T. Li, and C. Bonafos, Mater. Res. Soc. Proc. Vol. 1160 (MRS, Pittsburgh, 2009) }, volume = { }, year = { 2009 }, pages = { H14-05 } }

TY - JOUR AU - W. Braun AU - R. Shayduk AU - T. Flissikowski AU - H.T. Grahn AU - H. Riechert AU - P. Fons AU - A. Kolobov TI - Epitaxial phase change materials: Growth and switching of Ge₂Sb₂Te₅ on GaSb(001) JF - Materials and Physics for Nonvolatile Memories; edited by Y. Fujisaki, R. Waser, T. Li, and C. Bonafos, Mater. Res. Soc. Proc. Vol. 1160 (MRS, Pittsburgh, 2009) JA - Proc. MRS 1160 J1 - VL - SP - H14-05 PY - 2009/01/01

Optically induced strain relaxation in anisotropically strained M-plane GaN films

@article{ author = { T. Flissikowski and O. Brandt and P. Misra and H.T. Grahn }, title = { Optically induced strain relaxation in anisotropically strained <em>M</em>-plane GaN films }, journal = { Physica Status Solidi B }, volume = { 245 }, year = { 2008 }, pages = { 913 } }

TY - JOUR AU - T. Flissikowski AU - O. Brandt AU - P. Misra AU - H.T. Grahn TI - Optically induced strain relaxation in anisotropically strained <em>M</em>-plane GaN films JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 245 SP - 913 PY - 2008/01/01

Optically induced relaxation of anisotropically strained M-plane GaN films on LiAlO₂

@article{ author = { T. Flissikowski and O. Brandt and P. Misra and H.T. Grahn }, title = { Optically induced relaxation of anisotropically strained <em>M</em>-plane GaN films on LiAlO₂ }, journal = { Journal of Applied Physics }, volume = { 104 }, year = { 2008 }, pages = { 063507 } }

TY - JOUR AU - T. Flissikowski AU - O. Brandt AU - P. Misra AU - H.T. Grahn TI - Optically induced relaxation of anisotropically strained <em>M</em>-plane GaN films on LiAlO₂ JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 104 SP - 063507 PY - 2008/01/01

Co₂FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: Competition between spin injection and ultrafast spin alignment

@article{ author = { M. Ramsteiner and O. Brandt and T. Flissikowski and H.T. Grahn and M. Hashimoto and J. Herfort and H. Kostial }, title = { Co₂FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: Competition between spin injection and ultrafast spin alignment }, journal = { Physical Review B: Solid State }, volume = { 78 }, year = { 2008 }, pages = { 121303(R) } }

TY - JOUR AU - M. Ramsteiner AU - O. Brandt AU - T. Flissikowski AU - H.T. Grahn AU - M. Hashimoto AU - J. Herfort AU - H. Kostial TI - Co₂FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: Competition between spin injection and ultrafast spin alignment JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 78 SP - 121303(R) PY - 2008/01/01

Long-time evolution of the photoluminescence in C- and M-plane GaN/AlN quantum dots upon intense ultra-violet irradiation

@article{ author = { O. Brandt and T. Flissikowski and D. M. Schaadt and U. Jahn and A. Trampert and H.T. Grahn }, title = { Long-time evolution of the photoluminescence in <em>C</em>- and <em>M</em>-plane GaN/AlN quantum dots upon intense ultra-violet irradiation }, journal = { Applied Physics Letters }, volume = { 93 }, year = { 2008 }, pages = { 081907 } }

TY - JOUR AU - O. Brandt AU - T. Flissikowski AU - D. M. Schaadt AU - U. Jahn AU - A. Trampert AU - H.T. Grahn TI - Long-time evolution of the photoluminescence in <em>C</em>- and <em>M</em>-plane GaN/AlN quantum dots upon intense ultra-violet irradiation JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 93 SP - 081907 PY - 2008/01/01

Fast time behavior of the polarization filtering in anisotropically strained M-plane GaN films

@article{ author = { T. Flissikowski and P. Misra and O. Brandt and H.T. Grahn }, title = { Fast time behavior of the polarization filtering in anisotropically strained <em>M</em>-plane GaN films }, journal = { Physica Status Solidi C }, volume = { 4 }, year = { 2007 }, pages = { 175 } }

TY - JOUR AU - T. Flissikowski AU - P. Misra AU - O. Brandt AU - H.T. Grahn TI - Fast time behavior of the polarization filtering in anisotropically strained <em>M</em>-plane GaN films JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 4 SP - 175 PY - 2007/01/01