Strain adjusted manufacturing process for heterostructured nanowire LEDs

Strain within heterogenic semiconductor components directly affects their opto-electronic performance and limits the range of possible material combinations. In traditional planar heterostructures formed by a stack of semiconductor films on a substrate material, the strain of each layer is pre-determined by the choice of different materials for substrate and films. Therefore, performance improvement of these devices, like for instance LEDs, requires new materials and manufacturing processes.

Nano wire LED microscope image at (a) 200x and (b) 500x magnification.

Challenge

Strain within heterogenic semiconductor components directly affects their opto-electronic performance and limits the range of possible material combinations. In traditional planar heterostructures formed by a stack of semiconductor films on a substrate material, the strain of each layer is pre-determined by the choice of different materials for substrate and films. Therefore, performance improvement of these devices, like for instance LEDs, requires new materials and manufacturing processes.

 

Technology

With this innovative technology heterostructured strain-adjusted semiconductor structures with new material combinations can be realized. The technology consists of a method to produce strain-adjusted semiconductor heterostructures using crystalline nanowires. In nanowire heterostructures, strain relaxes elastically at the free side surfaces and can be controlled by the heterostructure geometry. It allows the combination of materials with significantly improved lattice parameters and opens a new path to strain engineered semiconductor devices like high performance LEDs.

 

Commercial Opportunity

The technology is available for in-licensing or joint development.

 

Developmental Status

The proof of concept of the manufacturing process has been established.

 

Patent Situation

A priority claiming German patent application was filed in 2011, followed by a PCT-application in 2012.

 

Further reading

Kaganer, V. M. & Belov, A. Y. Strain and x-ray diffraction from axial nanowire heterostructures. Physical Review B 85, 125402 (2012).

Wölz, M. et al. Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures. Nanotechnology 23, 455203 (2012).

Pfüller, C. et al. Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires. Applied Physics Letters 98, 113113 (2011).

Contact

Mercedes Reischel

Technology Transfer Manager

+49 30 20377-289

reischel@pdi-berlin.de