Publications

1. Titel

   Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge

   Author

   W. Chen, K. Egbo, H. Zhang, A. Ardenghi, O. Bierwagen

   Quelle

   J. Vac. Sci. Technol. A, 42, 032708 (2024)

   DOI:

   doi: 10.1116/6.0003453 (PDI-ID: 2951)

2. Titel

   Anisotropy of optical transitions in β-Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

   Author

   M. Meißner, N. Bernhardt, F. Nippert, B. M. Janzen, Z. Galazka, M. R. Wagner

   Quelle

   Appl. Phys. Lett., 124, 152102 (2024)

   DOI:

   10.1063/5.0189751 (PDI-ID: 2988)

3. Titel

   Polar discontinuity governs surface segregation and interface termination: A case study of LaInO3/BaSnO3

   Author

   M. Zupancic, W. Aggoune, A. Gloter, G. Hoffmann, F.-P. Schmidt, Z. Galazka, D. Pfützenreuter, A. A. Riaz, C. Schlueter, H. Amari, A. Regoutz, J. Schwarzkopf, T. Lunkenbein, C. Draxl, O. Bierwagen, M. Albrecht

   Quelle

   Phys. Rev. Mater., 8, 034602 (2024)

   DOI:

   10.1103/PhysRevMaterials.8.034602 (PDI-ID: 2985)

4. Titel

   Detection of Bi_Ga hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces

   Author

   E. Luna, J. Puustinen, J. Hilska, M. Guina

   Quelle

   J. Appl. Phys., 135, 125303 (2024)

   DOI:

   10.1063/5.0195965 (PDI-ID: 2984)

5. Titel

   Quantum dots on the InAs(110) cleavage surface created by atom manipulation

   Author

   V. D. Pham, Y. Pan, S. C. Erwin, S. Fölsch

   Quelle

   Phys. Rev. Research, 6, 013269 (2024)

   DOI:

   10.1103/PhysRevResearch.6.013269 (PDI-ID: 2977)

6. Titel

   In‐operando spatiotemporal imaging of coupled film‐substrate elastodynamics during an insulator‐to‐metal transition

   Author

   G. Stone, Y. Shi, M. Jerry, V. Stoica, H. Paik, Z. Cai, D. G. Schlom, R. Engel-Herbert, S. Datta, H. Wen, L.-Q. Chen, V. Gopalan

   Quelle

   Adv. Mater., tba, 2312673 (2024)

   DOI:

   10.1002/adma.202312673 (PDI-ID: 2986)

7. Titel

   Erratum: “Acquisition and analysis of scanning tunneling spectroscopy data – WSe2 monolayer” [J. Vac. Sci. Technol. A 39, 011001 (2021)]

   Author

   R. M. Feenstra, G. R. Frazier, Y. Pan, S. Fölsch, Y. C. Lin, B. Jariwala, K. Zhang, J. A. Robinson

   Quelle

   J. Vac. Sci. Technol. A, 42, 033401 (2024)

   DOI:

   10.1116/6.0003535 (PDI-ID: 2976)

8. Titel

   Molecular beam epitaxy of β-(InxGa1-x)2O3 on β-Ga2O3 (010): compositional control, layer quality, anisotropic strain relaxation, and prospects for two-dimensional electron gas confinement

   Author

   P. Mazzolini, C. Wouters, M. Albrecht, A. Falkenstein, M. Martin, P. Vogt, O. Bierwagen

   Quelle

   ACS Appl. Mater. Interfaces, 16, 12793-12804 (2024)

   DOI:

   10.1021/acsami.3c19095 (PDI-ID: 2962)

9. Titel

   Disappearance of rapid photoresponse in ultraviolet illumination of Ag–Sb–S films

   Author

   Y. Takagaki, M. Hanke, O. Brandt

   Quelle

   J. Phys. D: Appl. Phys., 57, 215104 (2024)

   DOI:

   10.1088/1361-6463/ad2b21 (PDI-ID: 2889)

10. Titel

    X-ray diffraction from dislocation half-loops in epitaxial films

    Author

    V. Kaganer

    Quelle

    J. Appl. Crystallogr., 57, 276-283 (2024)

    DOI:

    10.1107/S160057672400089X (PDI-ID: 2891)