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  1. Title

    Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge

    Author
    W. Chen, K. Egbo, H. Zhang, A. Ardenghi, O. Bierwagen
    Source
    J. Vac. Sci. Technol. A, 42, 032708 (2024)
    DOI:
    doi: 10.1116/6.0003453 (PDI-ID: 2951)
  2. Title

    Anisotropy of optical transitions in β-Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

    Author
    M. Meißner, N. Bernhardt, F. Nippert, B. M. Janzen, Z. Galazka, M. R. Wagner
    Source
    Appl. Phys. Lett., 124, 152102 (2024)
    DOI:
    10.1063/5.0189751 (PDI-ID: 2988)
  3. Title

    Polar discontinuity governs surface segregation and interface termination: A case study of LaInO3/BaSnO3

    Author
    M. Zupancic, W. Aggoune, A. Gloter, G. Hoffmann, F.-P. Schmidt, Z. Galazka, D. Pfützenreuter, A. A. Riaz, C. Schlueter, H. Amari, A. Regoutz, J. Schwarzkopf, T. Lunkenbein, C. Draxl, O. Bierwagen, M. Albrecht
    Source
    Phys. Rev. Mater., 8, 034602 (2024)
    DOI:
    10.1103/PhysRevMaterials.8.034602 (PDI-ID: 2985)
  4. Title

    Detection of Bi_Ga hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces

    Author
    E. Luna, J. Puustinen, J. Hilska, M. Guina
    Source
    J. Appl. Phys., 135, 125303 (2024)
    DOI:
    10.1063/5.0195965 (PDI-ID: 2984)
  5. Title

    Quantum dots on the InAs(110) cleavage surface created by atom manipulation

    Author
    V. D. Pham, Y. Pan, S. C. Erwin, S. Fölsch
    Source
    Phys. Rev. Research, 6, 013269 (2024)
    DOI:
    10.1103/PhysRevResearch.6.013269 (PDI-ID: 2977)
  6. Title

    In‐operando spatiotemporal imaging of coupled film‐substrate elastodynamics during an insulator‐to‐metal transition

    Author
    G. Stone, Y. Shi, M. Jerry, V. Stoica, H. Paik, Z. Cai, D. G. Schlom, R. Engel-Herbert, S. Datta, H. Wen, L.-Q. Chen, V. Gopalan
    Source
    Adv. Mater., tba, 2312673 (2024)
    DOI:
    10.1002/adma.202312673 (PDI-ID: 2986)
  7. Title

    Erratum: “Acquisition and analysis of scanning tunneling spectroscopy data – WSe2 monolayer” [J. Vac. Sci. Technol. A 39, 011001 (2021)]

    Author
    R. M. Feenstra, G. R. Frazier, Y. Pan, S. Fölsch, Y. C. Lin, B. Jariwala, K. Zhang, J. A. Robinson
    Source
    J. Vac. Sci. Technol. A, 42, 033401 (2024)
    DOI:
    10.1116/6.0003535 (PDI-ID: 2976)
  8. Title

    Molecular beam epitaxy of β-(InxGa1-x)2O3 on β-Ga2O3 (010): compositional control, layer quality, anisotropic strain relaxation, and prospects for two-dimensional electron gas confinement

    Author
    P. Mazzolini, C. Wouters, M. Albrecht, A. Falkenstein, M. Martin, P. Vogt, O. Bierwagen
    Source
    ACS Appl. Mater. Interfaces, 16, 12793-12804 (2024)
    DOI:
    10.1021/acsami.3c19095 (PDI-ID: 2962)
  9. Title

    Disappearance of rapid photoresponse in ultraviolet illumination of Ag–Sb–S films

    Author
    Y. Takagaki, M. Hanke, O. Brandt
    Source
    J. Phys. D: Appl. Phys., 57, 215104 (2024)
    DOI:
    10.1088/1361-6463/ad2b21 (PDI-ID: 2889)
  10. Title

    X-ray diffraction from dislocation half-loops in epitaxial films

    Author
    V. Kaganer
    Source
    J. Appl. Crystallogr., 57, 276-283 (2024)
    DOI:
    10.1107/S160057672400089X (PDI-ID: 2891)