Paul-Drude-Institut für Festkörperelektronik

Threading dislocations are among the most stubborn obstacles to integrating III-V semiconductors on silicon. Filter layers help, but a long-standing puzzle has been why thermal annealing reshapes their internal defect network without actually reducing dislocation density. In this scientific highlight, we present work by researchers at PDI and IES Montpellier who filmed individual dislocations in real time inside an electron microscope and identified the growth conditions under which filtering works best.

The Paul-Drude-Institut für Festkörperelektronik (PDI) in Berlin is opening applications for its Artist-in-Residency Program, offering Berlin-based artists a unique opportunity to immerse themselves in cutting-edge materials science research. The call is open until May 30, 2026.

A new study led by PDI's Van Dong Pham opens new pathways for engineering 2D metals at the nanoscale. The work has been published in Physical Review Materials and selected as an Editors' Suggestion, a distinction awarded to a small fraction of published papers that the editors consider particularly significant and of broad interest to the community.

We are delighted to welcome two distinguished scientists to the PDI Scientific Advisory Board (SAB), while also taking this opportunity to express our heartfelt gratitude to four long-serving members who are stepping down after years of invaluable guidance.