Paul-Drude-Institut für Festkörperelektronik

PDI is internationally recognized for molecular beam epitaxy (MBE) of inorganic semiconductors. Now the institute is bringing that expertise to an entirely different class of materials. PDI's Francisca Marín Largo and Carsten Stemmler have established a new MBE platform dedicated to the growth of organic semiconductors.

Congratulations to E. Canberk Özçelik, who recently completed his master's degree on acoustic manipulation of spin qudits in 6H-SiC. He carried out his study at Leibniz University Hannover, and at PDI under the supervision of Alberto Hernández-Mínguez.

We are delighted to congratulate Xin Du, who received a student award for an outstanding presentation at the E-MRS Fall Meeting 2026, which took place Warsaw from September 14 to 17, 2026. Xin presented her work on “Stable Step-Flow Growth of Homoepitaxial AlN by Plasma-Assisted Molecular Beam Epitaxy” in Symposium E, Wide and ultra-wide-bandgap semiconductors challenges: from materials to applications.

LaInO₃ is emerging as a key substrate for boosting the electron mobility of the transparent conductive oxide BaSnO₃, yet its fundamental lattice dynamics had remained poorly characterized. This highlight covers new work from PDI, along with collaborators from the Leibniz-Institut für Kristallzüchtung (IKZ) and Swansea University, that combines polarization-resolved Raman spectroscopy with DFT calculations to deliver a complete symmetry-assigned map of the material's phonon modes.