Third-party funded projects

The MINT project develops a fully epitaxial semiconductor-on-metal platform by integrating GaN and AlN on conductive titanium nitride (TiN) thin films to enable novel and scalable (opto-)electronic devices. Using molecular beam epitaxy (MBE) and subsequent lateral overgrowth by metal-organic chemical vapor deposition (MOCVD), the team aims to grow high-quality GaN and AlN structures directly on refractory TiN electrodes. This approach simplifies device fabrication, enhances thermal management and light extraction, and opens the way toward advanced µLEDs, bulk acoustic wave devices, and industrially relevant integration on silicon substrates. The German–French collaboration funded through the ANR–DFG programme brings complementary expertise to tackle the challenges of monolithic semiconductor/metal integration for next-generation electronics and photonics.

This project develops a predictive, atoms-to-device design framework for next-generation cryogenic electro-optic materials integrated on silicon to enable high-performance quantum photonic circuits. By addressing the “mesoscale cliff” — where promising nanoscale material properties degrade at larger device scales — the team combines theory, computation, and experiment to understand and optimize electro-optic effects, optical losses, and microwave dielectric behavior across scales. The research targets materials with cryogenic electro-optic coefficients far exceeding current standards, essential for gigahertz-range modulators in quantum networking, scalable quantum computing, and low-temperature applications. The outcomes will establish fundamental knowledge that bridges nanoscale discoveries and practical device performance, supporting the development of high-speed, low-loss silicon-integrated electro-optic technologies.

The MagicTune project addresses key challenges in realizing reliable, tunable magnetic tunnel junction (MTJ) devices using two-dimensional (2D) van der Waals (vdW) materials. Although 2D magnets have shown large tunneling magnetoresistance (TMR), demonstrations have been largely limited to cryogenic temperatures and exfoliated flakes. MagicTune develops scalable growth processes for epitaxial vdW magnetic heterostructures with high Curie temperatures and perpendicular magnetic anisotropy, and uses twist-angle and gate control to manipulate spin-polarized tunneling. The project aims to demonstrate robust room-temperature TMR with ratios exceeding 100 %, paving the way for high-performance, compact, and energy-efficient spintronic technologies.

This project uses low-temperature scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to create and investigate artificial quantum structures on semiconductor surfaces with atomic precision. By developing a highly controllable method of atom manipulation on the InAs(111)A surface, the team has demonstrated the construction of quantum dots, quantum dot molecules, and dimerized chains exhibiting topological boundary states. The upcoming project period focuses on deepening the understanding of energy level structures, expanding the approach to (110) cleaved surfaces for larger and more complex arrays, and exploring heterostructures designed for electrical gating of STM-generated quantum structures. Insights from this work will advance fundamental knowledge of electron behavior in reduced dimensions and support future quantum technologies.

Van der Waals heterostructures offer a powerful platform for creating two-dimensional materials with tailored, hybrid functionalities. The 2D-CHARM project aims to realize large-area, single-crystalline 2D ferroelectric/hexagonal boron nitride heterostructures using molecular beam epitaxy. By combining scalable growth with advanced, atomic-scale characterization, the project seeks to establish a fundamental understanding of structure–property relationships and to pave the way for future applications such as ultracompact non-volatile memories and artificial multiferroic devices.

This project focuses on developing new oxide interfaces to study two-dimensional electron and hole gases with improved spin–orbit coupling properties. It investigates (i) BaSnO₃-based 2DEGs with high room-temperature mobility and (ii) SrTiO₃- and KTaO₃-based 2DHGs. Their spin and orbital characteristics will be modeled theoretically, and samples will be grown using oxide MBE. Magnetotransport measurements will determine mobility, carrier density, and Rashba SOC strength. The project will use three-terminal devices to tune carrier density and explore superconductivity, fabricate spin-transport structures to measure spin-charge conversion, and combine electron and hole transport in a single device to demonstrate logic operation based on 2D electron and hole gases.

This project aims to establish novel rare-earth transition-metal (TM) nitrides and mixed TM/group-IIIa nitrides as a promising class of high-temperature thermoelectric materials for integrated nitride-device technologies.

This project develops integrated nanoscale acoustic nanoelectromechanical systems (acousto-NEMS) built on monolithic transition metal-doped nitride thin films for next-generation multifunctional technologies. By synthesizing novel (Al,TM)N compounds such as (Al,Hf)N and (Al,Zr)N on Si and SiC substrates and elucidating their composition–structure–property relationships, the team aims to realize efficient GHz surface acoustic wave (SAW) generation. Advanced fabrication and characterization of acousto-NEMS will explore mechanical resonances at millikelvin temperatures for quantum-link applications and robust pressure sensing above 500 °C. The project establishes a foundation for novel multifunctional materials, phononic platforms, and sensor prototypes.

This project explores integrating ultra-wide band gap oxides (GeO₂, SrSnO₃) with silicon using nanomembrane transfer and metamorphic buffer layers. It aims to demonstrate doping strategies and device functionality, enabling applications in power electronics, environmental monitoring, and UV optoelectronics. The research addresses key material challenges, advancing semiconductor technology for energy, automotive, and sensor applications.

This project explores the use of silicon vacancy (VSi) centers in SiC for on-chip quantum memories and sensors, controlled by high-frequency surface acoustic waves (SAWs). By integrating powerful piezoelectric films on SiC, the team aims to enable efficient SAW excitation and coherent spin manipulation. Part of the HINA Doctoral Network, this research advances photonic and acoustic technology, targeting industrial applications with cutting-edge performance.