Heterogeneous Integration of novel ultra-wide band gap oxides on silicon

The goal of the collaborative research project is to demonstrate that novel ultra-wide band gap semiconductor oxides—namely GeO₂ and SrSnO₃—can be integrated with the conventional semiconductor technology platform silicon. Two different strategies for the heterogeneous integration of these structurally and chemically dissimilar oxide semiconductors will be employed and evaluated: (i) mechanical transfer of oxide nanomembranes with rutile structure and (ii) direct growth of a metamorphic buffer layer with perovskite structure on silicon.

Doping strategies for rutile and perovskite oxide semiconductors will be established, and the device functionality of these ultra-wide band gap materials integrated on silicon will be demonstrated by fabricating and testing GeO₂- and SrSnO₃-based devices.

The proposed research has significant industrial and societal impacts due to the inherent properties of ultra-wide band gap semiconductors. These materials are ideally suited to control emerging smart and delocalized power grid architectures and enable the integration of environmentally friendly, carbon-neutral power generation solutions, such as photovoltaics and wind turbines. Digital controllers and switches made from ultra-wide band gap semiconductors are essential for developing high-performance electric motors, driving the ecological revolution in the automotive industry.

Beyond power electronics, these semiconductors extend the capabilities of controllers, sensors, and detectors to harsher environments, including high temperatures and radiation levels. Additional applications include deep-UV optoelectronic devices, such as photodiodes and photodetectors for air, water, and surface purification-disinfection. Solar-blind UV-C photodetectors offer further potential for environmental monitoring applications, including flame detection and non-line-of-sight communication solutions.

This joint research project aims to overcome fundamental barriers to the maturation and scalability of ultra-wide band gap semiconductors. By addressing existing material challenges, it will provide new insights into interface physics in artificial oxide heterostructures and expand the versatility of rutile and perovskite oxide semiconductors. Ultimately, this research contributes to global scientific and technological advancements in ultra-wide band gap semiconductor materials.