Shi-Hui Liu

Shi-Hui is a PhD student specializing in the growth of oxide materials. His research focuses on the epitaxial growth of rutile-GeO₂ as an ultra-wide band gap semiconductor using molecular beam epitaxy (MBE), as well as the growth of SrTiO₃ using hybrid MBE techniques. He characterizes the samples using a range of methods, including X-ray diffraction (XRD), atomic force microscopy (AFM), and electrical measurements such as the Hall effect and van der Pauw techniques.

In addition to his core research, Shi-Hui has experience with XRD and scanning electron microscopy (SEM), and he occasionally supports other research projects by assisting with these measurements.