Heterogeneous Integration of novel ultra-wide band gap oxides on silicon
This project explores integrating ultra-wide band gap oxides (GeO₂, SrSnO₃) with silicon using nanomembrane transfer and metamorphic buffer layers. It aims to demonstrate doping strategies and device functionality, enabling applications in power electronics, environmental monitoring, and UV optoelectronics. The research addresses key material challenges, advancing semiconductor technology for energy, automotive, and sensor applications.