Paul-Drude-Institut für Festkörperelektronik

A new study by researchers at the Paul-Drude-Institut für Festkörperelektronik (PDI), published in Journal of Physics D: Applied Physics, demonstrates a major advancement in the growth of high-quality indium gallium nitride (InₓGa₁₋ₓN) layers using plasma-assisted molecular beam epitaxy (MBE).

PDI researchers are out in force this summer, sharing their latest findings at conferences and workshops around the world. This is where you can meet them in June and July 2025.

Researchers at the Paul Drude Institute for Solid State Electronics, in collaboration with institutions in Berlin, London, Oxford, and Hamburg, report the formation of a two-dimensional electron gas (2DEG) with room-temperature electron mobility values up to 119 cm²/Vs at the interface between epitaxial layers of BaSnO₃ (BSO) and LaInO₃ (LIO). This mobility represents the highest value reported to date for a 2DEG in perovskite oxide systems at room temperature.

A collaborative research effort by scientists from PDI in Berlin, the Pennsylvania State University, and the New Jersey Institute of Technology has demonstrated the successful growth of high-quality indium selenide (InSe) thin films on semi-insulating gallium arsenide GaAs(111)B substrates using molecular beam epitaxy. This result addresses a very timely challenge in synthesizing InSe with controlled crystalline quality and integrating it with the compound semiconductor platform GaAs, thus opening up new possibilities for high-performance optoelectronic devices, including photodetectors and solar cells.