Investigation of Epitaxial Breakdown Mechanisms in Ga(As,Bi) Films Grown by Molecular Beam Epitaxy
Dilute bismide alloys such as Ga(As,Bi) represent a novel class of semiconductor materials that have attracted considerable interest due to their unique properties and potential for applications in infrared optoelectronics and high-efficiency solar cells. However, incorporating high %Bi into GaAs remains challenging due to its large size and electronegativity difference with As, making it prone to phase-separation and complicating the synthesis of high-quality Ga(As,Bi) epitaxial layers. Experimental studies have reported such phase separation via cluster formation, composition modulations and atomic ordering under specific growth conditions. The goal of this project is to identify the MBE growth conditions that lead to the epitaxial breakdown of Ga(As,Bi) epilayers. By understanding the underlying mechanisms, the project aims to optimize growth conditions for achieving high-quality Ga(As,Bi) layers. ... read more