Master Thesis: Growth of Cubic GaN on 3C-SiC/Si(001) Using Plasma-Assisted Molecular Beam Epitaxy
Cubic gallium nitride (GaN) is a promising material for high-frequency and optoelectronic devices due to its superior electronic properties and reduced polarization effects compared to its hexagonal counterpart. However, growing high-quality cubic GaN is challenging.
The primary goal of this project is to develop a process for growing high-quality cubic GaN on 3C-SiC/Si(001). The project will involve plasma-assisted molecular beam epitaxy (MBE) for material growth and advanced characterization techniques for structural and morphological analysis.
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