MBE growth and structural analysis of hexagonal chromium aluminum nitride
Group-III nitrides are at the heart of modern electronics, optoelectronics, and acoustic devices. This project explores a promising new member of the family: chromium aluminum nitride, or (Cr,Al)N. By incorporating chromium into the hexagonal AlN lattice, this material may combine piezoelectric and ferromagnetic properties — an unusual pairing that could open the door to new multifunctional device concepts. The student will use plasma-assisted molecular beam epitaxy (PAMBE) to grow (Cr,Al)N films on Si and SiC substrates and characterize them using XRD, AFM, RHEED, and XPS. The goal is to map out the growth conditions under which the hexagonal phase is stable — fundamental knowledge that does not yet exist for this material system. ... read more