Dr. Lutz Geelhaar

Head of Department Epitaxy

+49 30 20377-359

Epitaxy

Raum: 714

Titel

Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing

Author

J. Kang, R. Jose, O. Brandt, L. Geelhaar

Quelle

ACS Appl. Eng. Mater., 4, 1592-1599 (2026)

DOI:

10.1021/acsaenm.5c01058 (PDI-ID: 3119)
Titel

Diameter dependence of light absorption in GaAs nanowires evidenced by photoluminescence spectroscopy

Author

F. Marín Largo, I. Mohamed, O. Brandt, L. Geelhaar

Quelle

Adv. Opt. Mater., 14, 15, e03215 (2025)

DOI:

10.1002/adom.202503215 (PDI-ID: 3063)
Titel

From (In,Ga)N top-down nanowires to pseudo-substrates

Author

J. Kang, H. Zhang, A. Campbell, J. Lähnemann, O. Brandt, L. Geelhaar

Quelle

Proc. SPIE, 13582, 135820B (2025)

DOI:

10.1117/12.3067374 (PDI-ID: 3098)
Titel

Efforts to reduce the energy needed for the operation of our molecular beam epitaxy lab

Author

O. Bierwagen, H.-P. Schönherr, S. Heinitz, S. Behnke, C. Herrmann, J. Pfeiffer, C. Stemmler, L. Geelhaar

Quelle

Nano Ex., 6, 036001 (2025)

DOI:

10.1088/2632-959X/ade7a5 (PDI-ID: 3062)
Titel

Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

Author

J. Kang, M. Gómez Ruiz, D. V. Dinh, A. Campbell, P. John, T. Auzelle, A. Trampert, J. Lähnemann, O. Brandt, L. Geelhaar

Quelle

J. Phys. D: Appl. Phys., 58, 14LT01 (2025)

DOI:

10.1088/1361-6463/adb4e7 (PDI-ID: 3040)