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Huaide Zhang

PhD Student

+49 30 20377-346

zhang@pdi-berlin.de

Epitaxy

Raum: 709

Forschungsschwerpunkte

III-V Nanowires for Optoelectronics , Nitride Semiconductors

Publikationen

  1. Titel

    The structure-bonding-property paradigm in thermoelectrics: Microscale insights from correlative characterization

    Author
    H. Zhang, M. Wuttig, Y. Yu
    Quelle
    J. Mater. Sci. Technol., 271, 167-176 (2026)
    DOI:
    10.1016/j.jmst.2026.02.012 (PDI-ID: 3172)
  2. Titel

    From (In,Ga)N top-down nanowires to pseudo-substrates

    Author
    J. Kang, H. Zhang, A. Campbell, J. Lähnemann, O. Brandt, L. Geelhaar
    Quelle
    Proc. SPIE, 13582, 135820B (2025)
    DOI:
    10.1117/12.3067374 (PDI-ID: 3098)
  3. Titel

    Correlative characterizations reveal the structure‐bonding‐property relationship at a local scale

    Author
    H. Zhang, Y. Zhou, C. Zhou, M. Wuttig, Y. Yu
    Quelle
    Chem. Methods, 5, 202500009 (2025)
    DOI:
    10.1002/cmtd.202500009 (PDI-ID: 3099)
  4. Titel

    Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge

    Author
    W. Chen, K. Egbo, H. Zhang, A. Ardenghi, O. Bierwagen
    Quelle
    J. Vac. Sci. Technol. A, 42, 032708 (2024)
    DOI:
    10.1116/6.0003453 (PDI-ID: 2951)