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Jingxuan Kang

PhD Student

+49 30 20377-348

kang@pdi-berlin.de

Epitaxy

Raum: 710

Forschungsschwerpunkte

III-V Nanowires for Optoelectronics , Nitride Semiconductors

Publikationen

  1. Titel

    Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing

    Author
    J. Kang, R. Jose, O. Brandt, L. Geelhaar
    Quelle
    ACS Appl. Eng. Mater., 4, 1592-1599 (2026)
    DOI:
    10.1021/acsaenm.5c01058 (PDI-ID: 3119)
  2. Titel

    From (In,Ga)N top-down nanowires to pseudo-substrates

    Author
    J. Kang, H. Zhang, A. Campbell, J. Lähnemann, O. Brandt, L. Geelhaar
    Quelle
    Proc. SPIE, 13582, 135820B (2025)
    DOI:
    10.1117/12.3067374 (PDI-ID: 3098)
  3. Titel

    Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

    Author
    J. Kang, M. Gómez Ruiz, D. V. Dinh, A. Campbell, P. John, T. Auzelle, A. Trampert, J. Lähnemann, O. Brandt, L. Geelhaar
    Quelle
    J. Phys. D: Appl. Phys., 58, 14LT01 (2025)
    DOI:
    10.1088/1361-6463/adb4e7 (PDI-ID: 3040)
  4. Titel

    Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

    Author
    J. Kang, R. Jose, M. Oliva, T. Auzelle, M. Gómez Ruiz, A. Tahraoui, J. Lähnemann, O. Brandt, L. Geelhaar
    Quelle
    Nanotechnology, 35, 375301 (2024)
    DOI:
    10.1088/1361-6528/ad5682 (PDI-ID: 2970)