1. Startseite
  2. People
  3. People Directory
  4. PD Dr. Markus Raphael Wagner

PD Dr. Markus Raphael Wagner

Head of Department Semiconductor Spectroscopy

+49 30 20377-317

wagner@pdi-berlin.de

ORCID iD https://orcid.org/0000-0002-7367-5629

Semiconductor Spectroscopy

Raum: 517

Google Scholar Profile

Forschungsschwerpunkte

III-V Nanowires for Optoelectronics , Novel Functional Oxide Materials , Nitride Semiconductors

Projekte

Publikationen

  1. Titel

    Lattice dynamics and complete polarization analysis of Raman-active modes in LaInO_3

    Author
    J. Rose, H. Nguyen, M. Meißner, Z. Galazka, R. Gillen, O. Brandt, M. Ramsteiner, M. R. Wagner, H. Tornatzky
    Quelle
    Phys. Rev. Mater., 10, 094604 (2026)
    DOI:
    10.1103/frdm-2plg (PDI-ID: 3145)
  2. Titel

    Spectral dispersion of effective second-order susceptibility in monolayer WS2, WSe2, MoS2, and MoSe2 on bare glass: A systematic comparison for nonlinear photonics

    Author
    N. Bernhardt, M. Y. Bacaoco, Y. Q. Chee, J. Guo, M. S. Hossain, N. M. Nguyen, T. T. Tran, S. Ali, N. Medhekar, M. R. Wagner, A. S. Solntsev
    Quelle
    ACS Appl. Opt. Mater., 4, 2180-2187 (2026)
    DOI:
    10.1021/acsaom.6c00257 (PDI-ID: 3193)
  3. Titel

    Microscopic origin of temperature‐dependent anisotropic heat transport in ultrawide‐bandgap rutile GeO2

    Author
    P. Emtenani, M. Loletti, F. Nippert, E. B. Barros, Z. Galazka, H. Tornatzky, C. Thomsen, S. Reparaz, R. Rurali, M. R. Wagner
    Quelle
    Adv. Funct. Mater., 36, e76723 (2026)
    DOI:
    10.1002/adfm.76723 (PDI-ID: 3189)
  4. Titel

    Lattice dynamics in rutile germanium oxide (r-GeO2)

    Author
    H. Tornatzky, Z. Galazka, T. Schulz, R. Gillen, M. R. Wagner
    Quelle
    Adv. Electron. Mater., 12, e00586 (2026)
    DOI:
    10.1002/aelm.202500586 (PDI-ID: 3083)
  5. Titel

    Phonons in single‐domain κ‐Ga2O3 studied by polarization angle‐resolved Raman scattering

    Author
    A. Wüthrich, B. M. Janzen, R. Gillen, H. Tornatzky, A. Ardenghi, O. Bierwagen, A. Sacchi, P. Mazzolini, M. Ries, T. Ogawa, H. Nishinaka, M. R. Wagner
    Quelle
    Adv. Electron. Mater., 12, e00497 (2026)
    DOI:
    10.1002/aelm.202500497 (PDI-ID: 3146)