Dr. Philipp Maximilian John

Scientist

+49 30 20377-362

Epitaxy

Raum: 728

Titel

Corrigendum to “Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD” [Acta Materialia 297 (2025) 121357]

Author

V. Kaganer, D. Spallek, P. John, O. Brandt, J. Lähnemann

Quelle

Acta Mater., 302, 121671 (2025)

DOI:

10.1016/j.actamat.2025.121671 (PDI-ID: 3129)
Titel

Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD

Author

V. Kaganer, D. Spallek, P. John, O. Brandt, J. Lähnemann

Quelle

Acta Mater., 297, 121357 (2025)

DOI:

10.1016/j.actamat.2025.121357 (PDI-ID: 3065)
Titel

Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

Author

J. Kang, M. Gómez Ruiz, D. V. Dinh, A. Campbell, P. John, T. Auzelle, A. Trampert, J. Lähnemann, O. Brandt, L. Geelhaar

Quelle

J. Phys. D: Appl. Phys., 58, 14LT01 (2025)

DOI:

10.1088/1361-6463/adb4e7 (PDI-ID: 3040)
Titel

AlN Nanowire-Based Vertically Integrated Piezoelectric Nanogenerators

Author

N. Buatip, T. Auzelle, P. John, S. Rauwerdink, M. Sodhi, M. Salaün, B. Fernandez, E. Monroy, D. Mornex, C. R. Bowen, R. Songmuang

Quelle

ACS Appl. Nano Mater., 7, 15798 (2024)

DOI:

10.1021/acsanm.4c03075 (PDI-ID: 3014)
Titel

ScN/GaN(1-100): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Author

P. John, A. Trampert, D. V. Dinh, D. Spallek, J. Lähnemann, V. Kaganer, L. Geelhaar, O. Brandt, T. Auzelle

Quelle

Nano Lett., 24, 6233 (2024)

DOI:

10.1021/acs.nanolett.4c00659 (PDI-ID: 2950)