Dr. Philipp Maximilian John

Scientist

+49 30 20377-362

Epitaxy

Room: 728

Title

Corrigendum to “Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD” [Acta Materialia 297 (2025) 121357]

Author

V. Kaganer, D. Spallek, P. John, O. Brandt, J. Lähnemann

Source

Acta Mater., 302, 121671 (2025)

DOI:

10.1016/j.actamat.2025.121671 (PDI-ID: 3129)
Title

Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD

Author

V. Kaganer, D. Spallek, P. John, O. Brandt, J. Lähnemann

Source

Acta Mater., 297, 121357 (2025)

DOI:

10.1016/j.actamat.2025.121357 (PDI-ID: 3065)
Title

Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

Author

J. Kang, M. Gómez Ruiz, D. V. Dinh, A. Campbell, P. John, T. Auzelle, A. Trampert, J. Lähnemann, O. Brandt, L. Geelhaar

Source

J. Phys. D: Appl. Phys., 58, 14LT01 (2025)

DOI:

10.1088/1361-6463/adb4e7 (PDI-ID: 3040)
Title

AlN Nanowire-Based Vertically Integrated Piezoelectric Nanogenerators

Author

N. Buatip, T. Auzelle, P. John, S. Rauwerdink, M. Sodhi, M. Salaün, B. Fernandez, E. Monroy, D. Mornex, C. R. Bowen, R. Songmuang

Source

ACS Appl. Nano Mater., 7, 15798 (2024)

DOI:

10.1021/acsanm.4c03075 (PDI-ID: 3014)
Title

ScN/GaN(1-100): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Author

P. John, A. Trampert, D. V. Dinh, D. Spallek, J. Lähnemann, V. Kaganer, L. Geelhaar, O. Brandt, T. Auzelle

Source

Nano Lett., 24, 6233 (2024)

DOI:

10.1021/acs.nanolett.4c00659 (PDI-ID: 2950)