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  4. Lead-free piezoelectric nanowire-nanocellulose hybrids for flexible energy harvesters (Nanoflex)

Lead-free piezoelectric nanowire-nanocellulose hybrids for flexible energy harvesters (Nanoflex)

01/02/2022 - 30/06/2025

Left: Schematic flexible piezoelectric energy harvester. Right: Secondary electron micrograph of the active region of the energy harvester consisting of wurtzite (Al,Sc)N nanowires.

The aim of the project “Nanoflex“ is to develop a novel piezoelectric energy harvester based on (Al,Sc)N nanowires as a lead-free and environmentally friendly alternative to conventional devices. This project, funded equally by German (DFG) and French (ANR) founding agencies, is a lively symbiosis of the scientific disciplines of materials science, physics, chemistry and device engineering. At PDI, we focus on the large-scale epitaxy of novel III-nitride nanowires on metallic TiN substrates, with the main goal to boost their piezoelectric response. This is achieved by adding Sc into the hexagonal wurtzite crystal structure of AlN without deteriorating its crystalline quality. The resulting (Al,Sc)N nanowires exhibit piezoelectric coefficients up to five times greater than binary AlN and offer additional functionalities, such as their use on flexible substrates. We analyze the effect of Sc addition on the (Al,Sc)N materials properties by advanced structural, optical and piezoelectric characterization at both the micro- and nanoscale. The identification of these structure-property relationships is crucial for the analysis of the device physics, fabricated and measured by the French partners.


Scientific Highlight

Epitaxy of highly dissimilar transition metal nitride-semiconductor heterostructures with low defect density – the example ScN/GaN(1-100)

We demonstrate twin-free epitaxial growth of rocksalt ScN on wurtzite GaN by using the two-fold symmetric M-plane surface of GaN, avoiding twinning issues. This enables high-quality integration of transition metal nitrides with III-nitrides, enhancing device performance and enabling new applications with additional functionalities like superconductivity and photonic resonances.

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Selected Publications

  1. Title

    Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

    Author
    P. John, M. Gómez Ruiz, L. van Deurzen, J. Lähnemann, A. Trampert, L. Geelhaar, O. Brandt, T. Auzelle
    Source
    Nanotechnology, 34, 465605 (2023)
    DOI:
    10.1088/1361-6528/acefd8 (PDI-ID: 2910)
  2. Title

    ScN/GaN(1-100): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

    Author
    P. John, A. Trampert, D. V. Dinh, D. Spallek, J. Lähnemann, V. Kaganer, L. Geelhaar, O. Brandt, T. Auzelle
    Source
    Nano Lett., 24, 6233 (2024)
    DOI:
    https://doi.org/10.1021/acs.nanolett.4c00659 (PDI-ID: 2950)
  3. Title

    AlN Nanowire-Based Vertically Integrated Piezoelectric Nanogenerators

    Author
    N. Buatip, T. Auzelle, P. John, S. Rauwerdink, M. Sodhi, M. Salaün, B. Fernandez, E. Monroy, D. Mornex, C. R. Bowen, R. Songmuang
    Source
    ACS Appl. Nano Mater., 7, 15798 (2024)
    DOI:
    10.1021/acsanm.4c03075 (PDI-ID: 3014)