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Dr. Thomas Auzelle

Scientist

auzelle@pdi-berlin.de

Epitaxy

Projects

Publications

  1. Title

    Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

    Author
    J. Kang, M. Gómez Ruiz, D. V. Dinh, A. Campbell, P. John, T. Auzelle, A. Trampert, J. Lähnemann, O. Brandt, L. Geelhaar
    Source
    J. Phys. D: Appl. Phys., 58, 14LT01 (2025)
    DOI:
    10.1088/1361-6463/adb4e7 (PDI-ID: 3040)
  2. Title

    AlN Nanowire-Based Vertically Integrated Piezoelectric Nanogenerators

    Author
    N. Buatip, T. Auzelle, P. John, S. Rauwerdink, M. Sodhi, M. Salaün, B. Fernandez, E. Monroy, D. Mornex, C. R. Bowen, R. Songmuang
    Source
    ACS Appl. Nano Mater., 7, 15798 (2024)
    DOI:
    10.1021/acsanm.4c03075 (PDI-ID: 3014)
  3. Title

    Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

    Author
    J. Kang, R. Jose, M. Oliva, T. Auzelle, M. Gómez Ruiz, A. Tahraoui, J. Lähnemann, O. Brandt, L. Geelhaar
    Source
    Nanotechnology, 35, 375301 (2024)
    DOI:
    10.1088/1361-6528/ad5682 (PDI-ID: 2970)
  4. Title

    ScN/GaN(1-100): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

    Author
    P. John, A. Trampert, D. V. Dinh, D. Spallek, J. Lähnemann, V. Kaganer, L. Geelhaar, O. Brandt, T. Auzelle
    Source
    Nano Lett., 24, 6233 (2024)
    DOI:
    10.1021/acs.nanolett.4c00659 (PDI-ID: 2950)
  5. Title

    Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

    Author
    P. John, M. Gómez Ruiz, L. van Deurzen, J. Lähnemann, A. Trampert, L. Geelhaar, O. Brandt, T. Auzelle
    Source
    Nanotechnology, 34, 465605 (2023)
    DOI:
    10.1088/1361-6528/acefd8 (PDI-ID: 2910)