Dr. Lutz Geelhaar

Head of Department Epitaxy

+49 30 20377-359

Epitaxy

Room: 714

Title

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Author

H. Zhang, P. John, J. Kang, L. Geelhaar, Y. Cho, O. Brandt

Source

APL Mater., 14, 081104 (2026)

DOI:

10.1063/5.0345516 (PDI-ID: 3203)
Title

Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing

Author

J. Kang, R. Jose, O. Brandt, L. Geelhaar

Source

ACS Appl. Eng. Mater., 4, 1592-1599 (2026)

DOI:

10.1021/acsaenm.5c01058 (PDI-ID: 3119)
Title

Diameter dependence of light absorption in GaAs nanowires evidenced by photoluminescence spectroscopy

Author

F. Marín Largo, I. Mohamed, O. Brandt, L. Geelhaar

Source

Adv. Opt. Mater., 14, 15, e03215 (2025)

DOI:

10.1002/adom.202503215 (PDI-ID: 3063)
Title

From (In,Ga)N top-down nanowires to pseudo-substrates

Author

J. Kang, H. Zhang, A. Campbell, J. Lähnemann, O. Brandt, L. Geelhaar

Source

Proc. SPIE, 13582, 135820B (2025)

DOI:

10.1117/12.3067374 (PDI-ID: 3098)
Title

Efforts to reduce the energy needed for the operation of our molecular beam epitaxy lab

Author

O. Bierwagen, H.-P. Schönherr, S. Heinitz, S. Behnke, C. Herrmann, J. Pfeiffer, C. Stemmler, L. Geelhaar

Source

Nano Ex., 6, 036001 (2025)

DOI:

10.1088/2632-959X/ade7a5 (PDI-ID: 3062)