Dr. Lutz Geelhaar

Head of Department Epitaxy

+49 30 20377-359

Epitaxy

Room: 714

Title

Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing

Author

J. Kang, R. Jose, O. Brandt, L. Geelhaar

Source

ACS Appl. Eng. Mater., tba, tba (2026)

DOI:

10.1021/acsaenm.5c01058 (PDI-ID: 3119)
Title

Diameter dependence of light absorption in GaAs nanowires evidenced by photoluminescence spectroscopy

Author

F. Marín Largo, I. Mohamed, O. Brandt, L. Geelhaar

Source

Adv. Opt. Mater., 14, 15, e03215 (2025)

DOI:

10.1002/adom.202503215 (PDI-ID: 3063)
Title

From (In,Ga)N top-down nanowires to pseudo-substrates

Author

J. Kang, H. Zhang, A. Campbell, J. Lähnemann, O. Brandt, L. Geelhaar

Source

Proc. SPIE, 13582, 135820B (2025)

DOI:

10.1117/12.3067374 (PDI-ID: 3098)
Title

Efforts to reduce the energy needed for the operation of our molecular beam epitaxy lab

Author

O. Bierwagen, H.-P. Schönherr, S. Heinitz, S. Behnke, C. Herrmann, J. Pfeiffer, C. Stemmler, L. Geelhaar

Source

Nano Ex., 6, 036001 (2025)

DOI:

10.1088/2632-959X/ade7a5 (PDI-ID: 3062)
Title

Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

Author

J. Kang, M. Gómez Ruiz, D. V. Dinh, A. Campbell, P. John, T. Auzelle, A. Trampert, J. Lähnemann, O. Brandt, L. Geelhaar

Source

J. Phys. D: Appl. Phys., 58, 14LT01 (2025)

DOI:

10.1088/1361-6463/adb4e7 (PDI-ID: 3040)