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Dr. Mikel Gómez Ruiz

PostDoc

+49 30 20377-507

gomez@pdi-berlin.de

Semiconductor Spectroscopy

Raum: 507

Forschungsschwerpunkte

III-V Nanowires for Optoelectronics

Projekte

Kompetenzen

I study the optoelectronic properties of semiconductors, exploring how their structure and composition influence performance. Using electron beam-based techniques such as CL, EBSD, ECCI, and EDX, I investigate nanoscale defects and their effects. My work connects solid-state physics and materials science to advance semiconductor research and applications.

Publikationen

  1. Titel

    Growth of compositionally uniform InxGa1-xN layers with low relaxation degree on GaN by molecular beam epitaxy

    Author
    J. Kang, M. Gómez Ruiz, D. V. Dinh, A. Campbell, P. John, T. Auzelle, A. Trampert, J. Lähnemann, O. Brandt, L. Geelhaar
    Quelle
    J. Phys. D: Appl. Phys., 58, 14LT01 (2025)
    DOI:
    10.1088/1361-6463/adb4e7 (PDI-ID: 3040)
  2. Titel

    Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

    Author
    J. Kang, R. Jose, M. Oliva, T. Auzelle, M. Gómez Ruiz, A. Tahraoui, J. Lähnemann, O. Brandt, L. Geelhaar
    Quelle
    Nanotechnology, 35, 375301 (2024)
    DOI:
    10.1088/1361-6528/ad5682 (PDI-ID: 2970)
  3. Titel

    Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

    Author
    M. Gómez Ruiz, A. Castro, J. Herranz, A. da Silva, P. John, A. Trampert, O. Brandt, L. Geelhaar, J. Lähnemann
    Quelle
    Nanotechnology, 35, 265702 (2024)
    DOI:
    10.1088/1361-6528/ad375b (PDI-ID: 3008)
  4. Titel

    Axial growth characteristics of optically active InGaAs nanowire heterostructures for integrated nanophotonic devices

    Author
    H. W. Jeong, A. Ajay, M. Döblinger, S. Sturm, M. Gómez Ruiz, R. Zell, N. Mukhundhan, D.Stelzner, J. Lähnemann, K. Müller-Caspary, J. J. Finley, G. Koblmüller
    Quelle
    ACS Appl. Nano Mater., 7, 3032-3041 (2024)
    DOI:
    10.1021/acsanm.3c05392 (PDI-ID: 2959)
  5. Titel

    Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially-resolved cathodoluminescence and Raman spectroscopy

    Author
    M. Gómez Ruiz, M. D. Brubaker, K. A. Bertness, A. Roshko, H. Tornatzky, M. Ramsteiner, O. Brandt, J. Lähnemann
    Quelle
    APL Mater., 12, 101123 (2024)
    DOI:
    10.1063/5.0233859 (PDI-ID: 3030)