Core research areas

Projects

Expertise

I study the optoelectronic properties of semiconductors, exploring how their structure and composition influence performance. Using electron beam-based techniques such as CL, EBSD, ECCI, and EDX, I investigate nanoscale defects and their effects. My work connects solid-state physics and materials science to advance semiconductor research and applications.

Publications

  1. Title

    Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

    Author
    J. Kang, R. Jose, M. Oliva, T. Auzelle, M. Gómez Ruiz, A. Tahraoui, J. Lähnemann, O. Brandt, L. Geelhaar
    Source
    Nanotechnology, 35, 375301 (2024)
    DOI:
    10.1088/1361-6528/ad5682 (PDI-ID: 2970)
  2. Title

    Axial growth characteristics of optically active InGaAs nanowire heterostructures for integrated nanophotonic devices

    Author
    H. W. Jeong, A. Ajay, M. Döblinger, S. Sturm, M. Gómez Ruiz, R. Zell, N. Mukhundhan, D.Stelzner, J. Lähnemann, K. Müller-Caspary, J. J. Finley, G. Koblmüller
    Source
    ACS Appl. Nano Mater., 7, 3032-3041 (2024)
    DOI:
    10.1021/acsanm.3c05392 (PDI-ID: 2959)
  3. Title

    Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

    Author
    P. John, M. Gómez Ruiz, L. van Deurzen, J. Lähnemann, A. Trampert, L. Geelhaar, O. Brandt, T. Auzelle
    Source
    Nanotechnology, 34, 465605 (2023)
    DOI:
    10.1088/1361-6528/acefd8 (PDI-ID: 2910)