2D Materials

2D materials have attracted significant scientific interest due to their unique properties, often markedly distinct from those of their bulk counterparts, which unlock new opportunities in both fundamental research and technology. Despite considerable progress in the field, key challenges remain, particularly in large-scale synthesis and in understanding the full breadth of their physical properties.

With this new Core Research Area, we bring together existing expertise and ongoing activities on 2D materials across the institute. This initiative strengthens the synergy between complementary research directions and aims to drive more impactful outcomes across the following areas:

• Epitaxial growth of 2D materials and their heterostructures
• Advanced characterization
• Atomistic-scale simulations of growth and properties
• Exploration of fundamental properties

• ANR-DFG: 2D-Charm
• Defect-engineering in graphene via focused ion beam for tailored van der Waals epitaxy of h-BN (ENGRAVE)

2025

• Point defects and their dynamic behaviors in silver monolayer intercalated between graphene and SiC
  Authors: V. D. Pham, A. Jain, C. Dong, L.-S. Lu, J. A. Robinson, A. Trampert, R. Engel-Herbert 
  Source: Nano Lett., 26, 2, 5c05763 (2025)
  DOI: 10.1021/acs.nanolett.5c05763
   
• Vibration-assisted tunneling through single Au adatoms on two-dimensional WSe₂
  Authors: H. Kumar, Y. C. Lin, J. A. Robinson, S. Fölsch 
  Source: Phys. Rev. B, 112, 085414 (2025) 
  DOI:10.1103/nfd8-xrc4
   
• Van der Waals epitaxy of 2D gallium telluride on graphene: growth dynamics and principal component analysis
  Authors: M. Bissolo, M. Hanke, R. Calarco, J. J. Finley, G. Koblmüller, J. M. J. Lopes, E. Zallo 
  Source: Small, 21, 2503993 (2025) 
  DOI: 10.1002/smll.202503993
   
• Above-room-temperature ferromagnetism in large-scale epitaxial Fe3GaTe2/graphene van der Waals heterostructures
  Authors: T. Shinwari, K. Khan, H. Lv, A. Abebe Kassa, F. Munnik, S. Josephy, A. Trampert, V. Ukleev, C. Luo, F. Radu, J. Herfort, M. Hanke, J. M. J. Lopes 
  Source: ACS Nano, 19, 37561-37571 (2025) 
  DOI:10.1021/acsnano.5c07732

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