2023
- Anisotropic strain relaxation in epitaxially constrained α-(Al,Ga)2O3 thin films on a-plane Al2O3
Authors: A. Reis, M. Hanke, J. M. J. Lopes, A. Trampert
Source: Appl. Phys. Lett., 123, 122102 (2023)
DOI:10.1063/5.0168314
- Interface tomography of GaInAs/AlInAs quantum cascade laser active regions
Authors: E. Paysen, S. Schütt, S. Michler, Q. Yang, R. Aidam, A. Trampert
Source: Semicond. Sci. Technol., 38, 055009 (2023)
DOI:10.1088/1361-6641/acc34f
- Atomic structures and interfacial engineering of ultrathin indium intercalated between graphene and a SiC substrate
Authors: V. D. Pham, C. Dong, J. A. Robinson
Source: Nanoscale Adv., 5, 5601-5612 (2023)
DOI:10.1039/D3NA00630A
- Carrier diffusion length in GaN revisited
A figure of merit for the potential performance of any bipolar semiconductor device is the carrier diffusion length. For the technologically secondmost relevant semiconductor GaN, popular ways to determine this quantity using cathodoluminescence (CL) have been found to be based on incomplete physical models. This background motivates us to take a fresh, in-depth look on how to determine the carrier diffusion length in GaN using CL spectroscopy.
- Strategies for Analyzing Non-Common-Atom Heterovalent Interfaces
Semiconductor heterostructures are intrinsic to a wide range of modern-day electronic devices, such as computers, light-emitting devices and photodetectors. Knowledge of chemical interfacial profiles in these complex structures is critical to the task of optimizing the device performance. Here, we report on an innovative methodology that enables reliable interface structure analysis of non-common-atom heterovalent interfaces on all relevant length scales from hundred-nm to atomic resolution.
- Can we determine the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations?
A popular method to experimentally determine the diffusion length of minority carriers or excitons in semiconductors relies on the perception that threading dislocations are line defects that act as nonradiative sinks for carriers. The zone of reduced luminescence intensity around the dislocation is thus directly related to the carrier or exciton diffusion length. Here, we show that this understanding of a diffusion-controlled intensity contrast around threading dislocations in GaN{0001} is a misconception.