Archive: Nitride Semiconductors
Selected Publications
2023
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Authors: L. van Deurzen, J. Singhal, J. Encomendero, N. Pieczulewski, C. S. Chang, Y. Cho, D. A. Muller, H. G. Xing, D. Jena, O. Brandt, J. Lähnemann
Source: APL Mater., 11, 081109 (2023)
DOI:10.1063/5.0158390
Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
Authors: D. V. Dinh, J. Lähnemann, L. Geelhaar, O. Brandt
Source: Appl. Phys. Lett., 112, 152103-1 (2023)
DOI: 10.1063/5.0137873