- SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes
Authors: Kornelius Tetzner, Kingsley Egbo, Michael Klupsch, Ralph-Stephan Unger, Andreas Popp, Ta-Shun Chou, Saud Bin Anooz, Zbigniew Galazka, Achim Trampert, Oliver Bierwagen, Joachim Würfl
Source: Appl. Phys. Lett., 120, 112110 (2022)
DOI: 10.1063/5.0083032
- β-Gallium oxide power electronics
Authors: Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki
Source: APL Mater. 10, 029201 (2022)
DOI: https://doi.org/10.1063/5.0060327
- Isotopic study of Raman active phonon modes in β-Ga2O3
Authors: Benjamin M. Janzen, Piero Mazzolini, Roland Gillen, Andreas Falkenstein, Manfred Martin, Hans Tornatzky, Janina Maultzsch, Oliver Bierwagen, and Markus R. Wagner
Source: J. Mater. Chem. C, 9, 2311 (2021)
DOI: https://doi.org/10.1039/D0TC04101G