Furnace for graphene fabrication
This PDI-constructed system is used for the growth of epitaxial graphene on SiC at high temperatures (~1600 °C) by surface graphitization.
![](/fileadmin/_processed_/d/e/csm_csm_Furnaca_graphene_80178e14de_0f2207e8d6.webp)
It can operate in high vacuum as well as atmospheric pressures. Heating is achieved by radio frequency power. The maximum sample size is 2 cm × 2 cm.