Plasma Etching
SAMCO's RIE-140iP is a single wafer ICP etching system especially designed for high precision etching of compound semiconductor materials. This system features SAMCO's latest ICP plasma source technology which generates stable high-density plasma under low pressures and ensures precise anisotropic etching of GaN, InGaAs and quaternary compound semiconductor materials.
It is also fitted with a laser endpoint detection system so that etch depth can be measured in real time to determine the etch endpoint.
Features
- Single wafer processing for up to 4" round wafer
- Interferometric endpoint detection system
- Vertical sidewalls with excellent uniformity
- Operation in low gas flow and low pressure ranges
Applications
- Fabrication of laser diodes
- Etching of GaAs, InP and GaN
- Photonic crystal devices
- Quantum cascade lasers